JPH0134509B2 - - Google Patents

Info

Publication number
JPH0134509B2
JPH0134509B2 JP57232814A JP23281482A JPH0134509B2 JP H0134509 B2 JPH0134509 B2 JP H0134509B2 JP 57232814 A JP57232814 A JP 57232814A JP 23281482 A JP23281482 A JP 23281482A JP H0134509 B2 JPH0134509 B2 JP H0134509B2
Authority
JP
Japan
Prior art keywords
film
forming
electrode
insulating film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57232814A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59119980A (ja
Inventor
Okio Yoshida
Nozomi Harada
Hiroshi Washida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57232814A priority Critical patent/JPS59119980A/ja
Publication of JPS59119980A publication Critical patent/JPS59119980A/ja
Publication of JPH0134509B2 publication Critical patent/JPH0134509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57232814A 1982-12-25 1982-12-25 固体撮像装置の製造方法 Granted JPS59119980A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57232814A JPS59119980A (ja) 1982-12-25 1982-12-25 固体撮像装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57232814A JPS59119980A (ja) 1982-12-25 1982-12-25 固体撮像装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59119980A JPS59119980A (ja) 1984-07-11
JPH0134509B2 true JPH0134509B2 (fr) 1989-07-19

Family

ID=16945186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57232814A Granted JPS59119980A (ja) 1982-12-25 1982-12-25 固体撮像装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59119980A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2290723A2 (fr) 2009-08-28 2011-03-02 FUJIFILM Corporation Élément de conversion photoélectrique et dispositif d'imagerie
US8686408B2 (en) 2010-02-25 2014-04-01 Fujifilm Corporation Photoelectric conversion device, imaging device and production methods thereof
US8809847B2 (en) 2010-03-24 2014-08-19 Fujifilm Corporation Photoelectric conversion device and imaging device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198787A (ja) * 1991-11-08 1993-08-06 Canon Inc 固体撮像装置及びその製造方法
JP2011071481A (ja) 2009-08-28 2011-04-07 Fujifilm Corp 固体撮像装置，固体撮像装置の製造方法，デジタルスチルカメラ，デジタルビデオカメラ，携帯電話，内視鏡
JP5637751B2 (ja) 2009-08-28 2014-12-10 富士フイルム株式会社 固体撮像装置，固体撮像装置の製造方法
JP2014225527A (ja) * 2013-05-15 2014-12-04 キヤノン株式会社 検出装置、及び、検出システム

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2290723A2 (fr) 2009-08-28 2011-03-02 FUJIFILM Corporation Élément de conversion photoélectrique et dispositif d'imagerie
US8686408B2 (en) 2010-02-25 2014-04-01 Fujifilm Corporation Photoelectric conversion device, imaging device and production methods thereof
US8809847B2 (en) 2010-03-24 2014-08-19 Fujifilm Corporation Photoelectric conversion device and imaging device

Also Published As

Publication number Publication date
JPS59119980A (ja) 1984-07-11

Similar Documents

Publication Publication Date Title
US7791158B2 (en) CMOS image sensor including an interlayer insulating layer and method of manufacturing the same
US8169011B2 (en) Image sensor and method of manufacturing the same
JP2000012817A (ja) 固体撮像装置およびその製造方法
JP2797984B2 (ja) 固体撮像素子およびその製造方法
JPS6045057A (ja) 固体撮像装置の製造方法
US8729650B2 (en) Solid-state imaging device and method of fabricating the same
JPH05206437A (ja) 固体撮像装置及びその製造方法
JPH0134509B2 (fr)
JP3402429B2 (ja) 固体撮像素子及びその製造方法
JPH08204166A (ja) 積層型固体撮像装置
JP5706061B2 (ja) 分子結合を用いた２つの基板の組立方法
JPS5861663A (ja) 固体撮像装置の製造方法
JPH05226624A (ja) 固体撮像装置およびその製造方法
JP2003188368A (ja) 固体撮像装置の製造方法
JPS6051376A (ja) 固体撮像装置
JPH02262369A (ja) 固体撮像装置及びその製造方法
JP2007188964A (ja) 固体撮像素子およびその製造方法
JPH0669483A (ja) 固体撮像素子の画素およびその動作方法とその製造方法
JPS59151575A (ja) 固体撮像素子
JP2008235516A (ja) 固体撮像装置およびその製造方法
JPS6047574A (ja) 固体撮像装置
JPS59119760A (ja) 固体撮像素子
JPS6322469B2 (fr)
TW594983B (en) Method for manufacturing photodiode and the structure thereof
JPH04240771A (ja) 積層型固体撮像素子