JPH02140980U - - Google Patents

Info

Publication number
JPH02140980U
JPH02140980U JP4646589U JP4646589U JPH02140980U JP H02140980 U JPH02140980 U JP H02140980U JP 4646589 U JP4646589 U JP 4646589U JP 4646589 U JP4646589 U JP 4646589U JP H02140980 U JPH02140980 U JP H02140980U
Authority
JP
Japan
Prior art keywords
single crystal
chamber wall
radiation screen
upper chamber
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4646589U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4646589U priority Critical patent/JPH02140980U/ja
Publication of JPH02140980U publication Critical patent/JPH02140980U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例を示す縦断面図、第
２図は本考案に係る輻射スクリーンの斜視図、第
３図は輻射スクリーンの炉内の温度分布への影響
を示すグラフ、第４図は輻射スクリーンの酸素濃
度分布への影響を示すグラフ、第５図イ，ロはそ
れぞれ従来装置の縦断面図である。 １……チヤンバ、１ａ……上部チヤンバ壁、６
……単結晶、９……輻射スクリーン、１１……保
持部材。

Claims (1)

  1. 【実用新案登録請求の範囲】 成長せしめられる単結晶の周囲で且つ原料たる
    溶融液面の上部に、輻射スクリーンを配設した単
    結晶成長装置において、 前記輻射スクリーンの上端縁を上部チヤンバ壁
    に当接させると共に、この輻射スクリーンの上端
    を、前記上部チヤンバ壁に止着する複数の保持部
    材によつて挾持することを特徴とする単結晶成長
    装置。
JP4646589U 1989-04-20 1989-04-20 Pending JPH02140980U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4646589U JPH02140980U (ja) 1989-04-20 1989-04-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4646589U JPH02140980U (ja) 1989-04-20 1989-04-20

Publications (1)

Publication Number Publication Date
JPH02140980U true JPH02140980U (ja) 1990-11-26

Family

ID=31561568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4646589U Pending JPH02140980U (ja) 1989-04-20 1989-04-20

Country Status (1)

Country Link
JP (1) JPH02140980U (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570283A (ja) * 1991-03-20 1993-03-23 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及び装置
JPH0728964U (ja) * 1993-10-29 1995-05-30 住友シチックス株式会社 単結晶成長装置
US7538350B2 (en) 2001-12-28 2009-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570283A (ja) * 1991-03-20 1993-03-23 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及び装置
JPH0728964U (ja) * 1993-10-29 1995-05-30 住友シチックス株式会社 単結晶成長装置
US7538350B2 (en) 2001-12-28 2009-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film device

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