JPH02142525U - - Google Patents

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Publication number
JPH02142525U
JPH02142525U JP4819790U JP4819790U JPH02142525U JP H02142525 U JPH02142525 U JP H02142525U JP 4819790 U JP4819790 U JP 4819790U JP 4819790 U JP4819790 U JP 4819790U JP H02142525 U JPH02142525 U JP H02142525U
Authority
JP
Japan
Prior art keywords
sample
gas
reaction
gas outlet
reaction gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4819790U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4819790U priority Critical patent/JPH02142525U/ja
Publication of JPH02142525U publication Critical patent/JPH02142525U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】
第１図は従来のＣＶＤ装置の断面図、第２図は
本考案実施例の断面図、第３図は第２図の装置の
底面図、第４図は第２図の装置を用いるＣＶＤ装
置の配置図である。 １１……ガス吹出し部、１２……第１のガス吹
出し部、１３……第２のガス吹出し部、１４……
第１のガス導入管、１５……第２のガス導入管、
１６……ガス吹出し孔、１７……ＳｉＨ４ガスボ
ンベ、１８，２０……Ｈｅガスボンベ、１９……
ＷＦ６ガスボンベ。

Claims (1)

  1. 【実用新案登録請求の範囲】 第１の反応ガス１７と第２の反応ガス１９とを
    用いて、該第１の反応ガス１７と該第２の反応ガ
    ス１９とからできる反応生成物を成膜する化学気
    相成長装置において、 被成膜試料２を載置すべき試料支持台４と、 該試料支持台４の該被成膜試料２を載置すべき
    面とは対向するように配置され、多数の細孔から
    なり、前記第１の反応ガス１７を吹き出す第１の
    ガス吹出し口１６と、 該試料支持台４の該被成膜試料２を載置すべき
    面とは対向するように配置され、かつ該第１のガ
    ス吹出し口１６とは前記被成膜試料２までの距離
    が違えてなるように構成され、多数の細孔からな
    り、前記第２の反応ガス１９を吹き出す第１のガ
    ス吹出し口１６とを反応チヤンバ１内に擁するこ
    とを特徴とする化学気相成長装置。
JP4819790U 1990-05-10 1990-05-10 Pending JPH02142525U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4819790U JPH02142525U (ja) 1990-05-10 1990-05-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4819790U JPH02142525U (ja) 1990-05-10 1990-05-10

Publications (1)

Publication Number Publication Date
JPH02142525U true JPH02142525U (ja) 1990-12-04

Family

ID=31564793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4819790U Pending JPH02142525U (ja) 1990-05-10 1990-05-10

Country Status (1)

Country Link
JP (1) JPH02142525U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645266A (ja) * 1991-12-30 1994-02-18 Texas Instr Inc <Ti> 単一ウエーハ半導体処理装置用プログラム可能な多ゾーンガス注入器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678497A (en) * 1979-11-27 1981-06-27 Fujitsu Ltd Vapor growth apparatus
JPS56137639A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Decompression vapor growth device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678497A (en) * 1979-11-27 1981-06-27 Fujitsu Ltd Vapor growth apparatus
JPS56137639A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Decompression vapor growth device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645266A (ja) * 1991-12-30 1994-02-18 Texas Instr Inc <Ti> 単一ウエーハ半導体処理装置用プログラム可能な多ゾーンガス注入器

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