JPH02153552A - 半導体素子及びその製造方法 - Google Patents
半導体素子及びその製造方法Info
- Publication number
- JPH02153552A JPH02153552A JP1124486A JP12448689A JPH02153552A JP H02153552 A JPH02153552 A JP H02153552A JP 1124486 A JP1124486 A JP 1124486A JP 12448689 A JP12448689 A JP 12448689A JP H02153552 A JPH02153552 A JP H02153552A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- electrode
- insulating film
- silicon
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
- H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H10D48/381—Multistable devices; Devices having two or more distinct operating states
Landscapes
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Read Only Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3927033A DE3927033C2 (de) | 1988-08-23 | 1989-08-16 | Halbleiterbauelement mit Antifuse-Elektrodenanordnung und Verfahren zu seiner Herstellung |
| KR1019890011867A KR940008564B1 (ko) | 1988-08-23 | 1989-08-21 | 반도체 소자 및 그 제조방법 |
| US07/609,109 US5210598A (en) | 1988-08-23 | 1990-10-31 | Semiconductor element having a resistance state transition region of two-layer structure |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20903488 | 1988-08-23 | ||
| JP63-209034 | 1988-08-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02153552A true JPH02153552A (ja) | 1990-06-13 |
Family
ID=16566160
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1124486A Pending JPH02153552A (ja) | 1988-08-23 | 1989-05-19 | 半導体素子及びその製造方法 |
| JP18538789A Expired - Fee Related JPH0756884B2 (ja) | 1988-08-23 | 1989-07-18 | 半導体素子の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18538789A Expired - Fee Related JPH0756884B2 (ja) | 1988-08-23 | 1989-07-18 | 半導体素子の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JPH02153552A (ko) |
| KR (1) | KR940008564B1 (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04312949A (ja) * | 1991-03-26 | 1992-11-04 | Mitsubishi Electric Corp | 半導体装置の調整方法 |
| US5485032A (en) * | 1992-12-18 | 1996-01-16 | International Business Machines Corporation | Antifuse element with electrical or optical programming |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714024B2 (ja) * | 1990-11-29 | 1995-02-15 | 川崎製鉄株式会社 | マルチチップモジュール |
| US5625220A (en) * | 1991-02-19 | 1997-04-29 | Texas Instruments Incorporated | Sublithographic antifuse |
| US5100827A (en) * | 1991-02-27 | 1992-03-31 | At&T Bell Laboratories | Buried antifuse |
| US5557136A (en) * | 1991-04-26 | 1996-09-17 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
| US5196724A (en) * | 1991-04-26 | 1993-03-23 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
| US5701027A (en) * | 1991-04-26 | 1997-12-23 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
| KR970001351B1 (ko) * | 1994-03-23 | 1997-02-05 | 주식회사 신아스포츠 | 낚시용 리일의 베일아암 반전장치 |
| US6156588A (en) * | 1998-06-23 | 2000-12-05 | Vlsi Technology, Inc. | Method of forming anti-fuse structure |
| JP5525694B2 (ja) * | 2007-03-14 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| JP5641840B2 (ja) * | 2009-10-01 | 2014-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
1989
- 1989-05-19 JP JP1124486A patent/JPH02153552A/ja active Pending
- 1989-07-18 JP JP18538789A patent/JPH0756884B2/ja not_active Expired - Fee Related
- 1989-08-21 KR KR1019890011867A patent/KR940008564B1/ko not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04312949A (ja) * | 1991-03-26 | 1992-11-04 | Mitsubishi Electric Corp | 半導体装置の調整方法 |
| US5485032A (en) * | 1992-12-18 | 1996-01-16 | International Business Machines Corporation | Antifuse element with electrical or optical programming |
Also Published As
| Publication number | Publication date |
|---|---|
| KR900004026A (ko) | 1990-03-27 |
| JPH02146745A (ja) | 1990-06-05 |
| JPH0756884B2 (ja) | 1995-06-14 |
| KR940008564B1 (ko) | 1994-09-24 |
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