JPH0282035U - - Google Patents

Info

Publication number
JPH0282035U
JPH0282035U JP1988161424U JP16142488U JPH0282035U JP H0282035 U JPH0282035 U JP H0282035U JP 1988161424 U JP1988161424 U JP 1988161424U JP 16142488 U JP16142488 U JP 16142488U JP H0282035 U JPH0282035 U JP H0282035U
Authority
JP
Japan
Prior art keywords
conductor film
thick
semiconductor chip
circuit board
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1988161424U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988161424U priority Critical patent/JPH0282035U/ja
Publication of JPH0282035U publication Critical patent/JPH0282035U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Die Bonding (AREA)

Description

【図面の簡単な説明】
第1図は本考案の一実施例の縦断面図、第2図
は従来構造の縦断面図、第3図は従来の不具合を
説明するための第2図の一部の拡大断面図である
。 1……絶縁基板(アルミナ基板)、2……導体
膜、3……抵抗膜、4……ガラス保護膜、5……
ダイオード(半導体チツプ)、6……厚い導体膜
、7……高温ロー材。

Claims (1)

    【実用新案登録請求の範囲】
  1. 絶縁基板上に形成した薄い導体膜上にシリコン
    を含むロー材で半導体チツプを搭載する厚膜回路
    基板において、前記半導体チツプを搭載する箇所
    の前記導体膜上に厚い導体膜を選択的に形成した
    ことを特徴とする厚膜回路基板。
JP1988161424U 1988-12-13 1988-12-13 Pending JPH0282035U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988161424U JPH0282035U (ja) 1988-12-13 1988-12-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988161424U JPH0282035U (ja) 1988-12-13 1988-12-13

Publications (1)

Publication Number Publication Date
JPH0282035U true JPH0282035U (ja) 1990-06-25

Family

ID=31444347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988161424U Pending JPH0282035U (ja) 1988-12-13 1988-12-13

Country Status (1)

Country Link
JP (1) JPH0282035U (ja)

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