JPH0362302B2 - - Google Patents

Info

Publication number
JPH0362302B2
JPH0362302B2 JP60259690A JP25969085A JPH0362302B2 JP H0362302 B2 JPH0362302 B2 JP H0362302B2 JP 60259690 A JP60259690 A JP 60259690A JP 25969085 A JP25969085 A JP 25969085A JP H0362302 B2 JPH0362302 B2 JP H0362302B2
Authority
JP
Japan
Prior art keywords
semiconductor
layer
drain
carrier supply
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60259690A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62122177A (ja
Inventor
Toshio Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60259690A priority Critical patent/JPS62122177A/ja
Publication of JPS62122177A publication Critical patent/JPS62122177A/ja
Publication of JPH0362302B2 publication Critical patent/JPH0362302B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60259690A 1985-11-21 1985-11-21 半導体装置 Granted JPS62122177A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60259690A JPS62122177A (ja) 1985-11-21 1985-11-21 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60259690A JPS62122177A (ja) 1985-11-21 1985-11-21 半導体装置

Publications (2)

Publication Number Publication Date
JPS62122177A JPS62122177A (ja) 1987-06-03
JPH0362302B2 true JPH0362302B2 (mo) 1991-09-25

Family

ID=17337564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60259690A Granted JPS62122177A (ja) 1985-11-21 1985-11-21 半導体装置

Country Status (1)

Country Link
JP (1) JPS62122177A (mo)

Also Published As

Publication number Publication date
JPS62122177A (ja) 1987-06-03

Similar Documents

Publication Publication Date Title
JP2773487B2 (ja) トンネルトランジスタ
US5705827A (en) Tunnel transistor and method of manufacturing same
JPH024140B2 (mo)
JPH084138B2 (ja) 半導体装置
US4903091A (en) Heterojunction transistor having bipolar characteristics
JP3301888B2 (ja) 電界効果型半導体装置
JP2768097B2 (ja) トンネルトランジスタ
JP2800675B2 (ja) トンネルトランジスタ
JPH04277680A (ja) トンネルトランジスタ及びその製造方法
JPH0311767A (ja) 速度変調型電界効果トランジスタ
JP2655594B2 (ja) 集積型半導体装置
JPH0546705B2 (mo)
JPH088360B2 (ja) トンネルトランジスタおよびその製造方法
JPH0620142B2 (ja) 半導体装置
JP2792295B2 (ja) トンネルトランジスタ
JP2658934B2 (ja) トンネルトランジスタ
US5712491A (en) Lateral theta device
JP2778447B2 (ja) トンネルトランジスタおよびその製造方法
JPH025438A (ja) 絶縁ゲート型電界効果トランジスタ
JPS62122177A (ja) 半導体装置
JPS6281063A (ja) 超格子電子素子
JPS6057978A (ja) 半導体装置
JPH0714056B2 (ja) 半導体装置
JPS59149063A (ja) 半導体装置
JP2757758B2 (ja) トンネルトランジスタおよびその製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees