JPH04500241A - 真空中で支持体へ皮膜を蒸着するための方法と装置 - Google Patents
真空中で支持体へ皮膜を蒸着するための方法と装置Info
- Publication number
- JPH04500241A JPH04500241A JP1509077A JP50907789A JPH04500241A JP H04500241 A JPH04500241 A JP H04500241A JP 1509077 A JP1509077 A JP 1509077A JP 50907789 A JP50907789 A JP 50907789A JP H04500241 A JPH04500241 A JP H04500241A
- Authority
- JP
- Japan
- Prior art keywords
- flow
- support
- channel
- cross
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 11
- 238000000151 deposition Methods 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims description 23
- 230000008020 evaporation Effects 0.000 claims description 18
- 238000001704 evaporation Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 238000009833 condensation Methods 0.000 claims description 3
- 230000005494 condensation Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WJCRZORJJRCRAW-UHFFFAOYSA-N cadmium gold Chemical compound [Cd].[Au] WJCRZORJJRCRAW-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT211088A AT392486B (de) | 1988-08-29 | 1988-08-29 | Verfahren und vorrichtung zum aufdampfen einer beschichtung auf einem traeger im vakuum |
| AT2110/88 | 1988-08-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04500241A true JPH04500241A (ja) | 1992-01-16 |
Family
ID=3527991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1509077A Pending JPH04500241A (ja) | 1988-08-29 | 1989-08-29 | 真空中で支持体へ皮膜を蒸着するための方法と装置 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0431021A1 (de) |
| JP (1) | JPH04500241A (de) |
| AT (1) | AT392486B (de) |
| WO (1) | WO1990002214A1 (de) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3361591A (en) * | 1964-04-15 | 1968-01-02 | Hughes Aircraft Co | Production of thin films of cadmium sulfide, cadmium telluride or cadmium selenide |
| CH626407A5 (de) * | 1977-07-08 | 1981-11-13 | Balzers Hochvakuum | |
| DE3204337A1 (de) * | 1981-02-10 | 1982-11-04 | Fuji Photo Film Co., Ltd., Minami-Ashigara, Kanagawa | Verfahren und vorrichtung zum bilden eines duennen films |
| US4700660A (en) * | 1984-06-12 | 1987-10-20 | Kievsky Politekhnichesky Institut | Evaporator for depositing films in a vacuum |
-
1988
- 1988-08-29 AT AT211088A patent/AT392486B/de not_active IP Right Cessation
-
1989
- 1989-08-29 EP EP19890909676 patent/EP0431021A1/de not_active Withdrawn
- 1989-08-29 JP JP1509077A patent/JPH04500241A/ja active Pending
- 1989-08-29 WO PCT/AT1989/000077 patent/WO1990002214A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| AT392486B (de) | 1991-04-10 |
| ATA211088A (de) | 1990-09-15 |
| EP0431021A1 (de) | 1991-06-12 |
| WO1990002214A1 (de) | 1990-03-08 |
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