JPH0519816B2 - - Google Patents

Info

Publication number
JPH0519816B2
JPH0519816B2 JP59032622A JP3262284A JPH0519816B2 JP H0519816 B2 JPH0519816 B2 JP H0519816B2 JP 59032622 A JP59032622 A JP 59032622A JP 3262284 A JP3262284 A JP 3262284A JP H0519816 B2 JPH0519816 B2 JP H0519816B2
Authority
JP
Japan
Prior art keywords
fuse
cutting
oxide film
opening
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59032622A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60177649A (ja
Inventor
Masakazu Shiozaki
Kenji Hishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59032622A priority Critical patent/JPS60177649A/ja
Publication of JPS60177649A publication Critical patent/JPS60177649A/ja
Publication of JPH0519816B2 publication Critical patent/JPH0519816B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP59032622A 1984-02-24 1984-02-24 ヒユ−ズの切断方法 Granted JPS60177649A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59032622A JPS60177649A (ja) 1984-02-24 1984-02-24 ヒユ−ズの切断方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59032622A JPS60177649A (ja) 1984-02-24 1984-02-24 ヒユ−ズの切断方法

Publications (2)

Publication Number Publication Date
JPS60177649A JPS60177649A (ja) 1985-09-11
JPH0519816B2 true JPH0519816B2 (de) 1993-03-17

Family

ID=12363949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59032622A Granted JPS60177649A (ja) 1984-02-24 1984-02-24 ヒユ−ズの切断方法

Country Status (1)

Country Link
JP (1) JPS60177649A (de)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892251A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60177649A (ja) 1985-09-11

Similar Documents

Publication Publication Date Title
US4476375A (en) Process for selective cutting of electrical conductive layer by irradiation of energy beam
US4503315A (en) Semiconductor device with fuse
JPH061793B2 (ja) 集積回路の相互接続配線網を形成する多層配線導体間をレ−ザプログラミングにより接続する方法およびこの方法を応用して得られる集積回路
JPH0719842B2 (ja) 半導体装置の冗長回路
JP3509985B2 (ja) 半導体デバイスのチップ分離方法
JP2004055876A (ja) 半導体装置及び半導体装置の製造方法
JPH0519816B2 (de)
JP3489088B2 (ja) 冗長手段を有する半導体装置及びその製造方法
US5861325A (en) Technique for producing interconnecting conductive links
JPS59124741A (ja) 半導体装置
JP2766912B2 (ja) 集積回路装置の製造方法
JPS6122652A (ja) 半導体装置
JPS63198354A (ja) 半導体装置
JP2000003926A (ja) バンプ形成方法
JPH0440858B2 (de)
JPS5892251A (ja) 半導体装置の製造方法
JPS6146047A (ja) ヒユ−ズ配線体の溶断方法
JP2006278373A (ja) 半導体装置およびそのトリミング方法
JPH10144508A (ja) チップ抵抗器におけるレーザトリミング方法
JPS59104141A (ja) 半導体装置の製造方法
JPS6334952A (ja) 半導体装置内の回路選択用ヒユ−ズ
JPS61110447A (ja) 半導体装置
JPH11284074A (ja) 半導体デバイス用フューズ
JPH0344062A (ja) 改善された可溶性リンクを有する集積回路
JPS6038836A (ja) 半導体装置