JPH0546108B2 - - Google Patents
Info
- Publication number
- JPH0546108B2 JPH0546108B2 JP61167925A JP16792586A JPH0546108B2 JP H0546108 B2 JPH0546108 B2 JP H0546108B2 JP 61167925 A JP61167925 A JP 61167925A JP 16792586 A JP16792586 A JP 16792586A JP H0546108 B2 JPH0546108 B2 JP H0546108B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- drain
- impurity concentration
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61167925A JPS6211276A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61167925A JPS6211276A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54162677A Division JPS6041876B2 (ja) | 1979-12-17 | 1979-12-17 | 絶縁ゲ−ト型電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6211276A JPS6211276A (ja) | 1987-01-20 |
| JPH0546108B2 true JPH0546108B2 (de) | 1993-07-13 |
Family
ID=15858600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61167925A Granted JPS6211276A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6211276A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0791965A3 (de) * | 1996-02-26 | 1998-09-16 | SILICONIX Incorporated | Vertikal-Transistor mit vier Klemmen |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54162677A (en) * | 1978-06-14 | 1979-12-24 | Babcock Hitachi Kk | Dust separating method |
| US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
-
1986
- 1986-07-18 JP JP61167925A patent/JPS6211276A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6211276A (ja) | 1987-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW494481B (en) | Semiconductor device and manufacturing method thereof | |
| JP3032138B2 (ja) | 高密度ｍｏｓ型電力装置の製造方法およびこの方法により製造された高密度ｍｏｓ型電力装置 | |
| JP3915180B2 (ja) | トレンチ型ｍｏｓ半導体装置およびその製造方法 | |
| JPS5932172A (ja) | シヨツトキ−障壁ｍｏｓデバイスからなる集積回路及びその製造方法 | |
| JPH0640582B2 (ja) | 絶縁ゲ−ト電界効果トランジスタの製造方法 | |
| JPH053751B2 (de) | ||
| JPH0638496B2 (ja) | 半導体装置 | |
| JPH05251709A (ja) | ソース・ベース間短絡部を有する電力用ｍｏｓ−ｆｅｔおよびその製造方法 | |
| US5485028A (en) | Semiconductor device having a single crystal semiconductor layer formed on an insulating film | |
| US20060220122A1 (en) | Semiconductor device and method of manufacturing the same | |
| JPS6041876B2 (ja) | 絶縁ゲ−ト型電界効果トランジスタの製造方法 | |
| JPH0546108B2 (de) | ||
| JPS62229880A (ja) | 半導体装置及びその製造方法 | |
| JPH09191106A (ja) | 半導体装置およびその製造方法 | |
| JP2004063918A (ja) | 横型ｍｏｓトランジスタ | |
| JPS6246570A (ja) | 縦形半導体装置及びその製造方法 | |
| JPS61119078A (ja) | Ｍｏｓ型半導体装置 | |
| JPS6211275A (ja) | 半導体装置 | |
| JP3031282B2 (ja) | 半導体装置 | |
| JPS625344B2 (de) | ||
| JPH0612822B2 (ja) | 半導体装置 | |
| JP2004022555A (ja) | 絶縁ゲート型電界効果トランジスタおよびその製造方法 | |
| JPS6153868B2 (de) | ||
| JPH061775B2 (ja) | 半導体装置の製造方法 | |
| JPH06275821A (ja) | Ｍｏｓトランジスタとその製造方法 |