JPH0570928B2 - - Google Patents

Info

Publication number
JPH0570928B2
JPH0570928B2 JP58135906A JP13590683A JPH0570928B2 JP H0570928 B2 JPH0570928 B2 JP H0570928B2 JP 58135906 A JP58135906 A JP 58135906A JP 13590683 A JP13590683 A JP 13590683A JP H0570928 B2 JPH0570928 B2 JP H0570928B2
Authority
JP
Japan
Prior art keywords
silicon
semiconductor
film
amorphous
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58135906A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6028223A (ja
Inventor
Toshio Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58135906A priority Critical patent/JPS6028223A/ja
Publication of JPS6028223A publication Critical patent/JPS6028223A/ja
Publication of JPH0570928B2 publication Critical patent/JPH0570928B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3822—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing

Landscapes

  • Recrystallisation Techniques (AREA)
JP58135906A 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法 Granted JPS6028223A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58135906A JPS6028223A (ja) 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58135906A JPS6028223A (ja) 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6028223A JPS6028223A (ja) 1985-02-13
JPH0570928B2 true JPH0570928B2 (2) 1993-10-06

Family

ID=15162589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58135906A Granted JPS6028223A (ja) 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6028223A (2)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293793A (ja) * 1996-04-26 1997-11-11 Mitsubishi Electric Corp 薄膜トランジスタを有する半導体装置およびその製造方法
KR100843741B1 (ko) 2007-03-31 2008-07-04 동국대학교 산학협력단 실리콘적층 사파이어 박막의 제조방법

Also Published As

Publication number Publication date
JPS6028223A (ja) 1985-02-13

Similar Documents

Publication Publication Date Title
US4975126A (en) Process for the production of an insulating layer embedded in a semiconductor substrate by ionic implantation and semiconductor structure comprising such layer
US4659392A (en) Selective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuits
US4775641A (en) Method of making silicon-on-sapphire semiconductor devices
US4385937A (en) Regrowing selectively formed ion amorphosized regions by thermal gradient
US4500388A (en) Method for forming monocrystalline semiconductor film on insulating film
JP2006524426A (ja) 基板上に歪層を製造する方法と層構造
US6784072B2 (en) Control of buried oxide in SIMOX
US5484746A (en) Process for forming semiconductor thin film
US4693758A (en) Method of making devices in silicon, on insulator regrown by laser beam
JPH04250669A (ja) ポリシリコン薄膜半導体装置
JPH04264724A (ja) 半導体基板の製造方法
JPH0570928B2 (2)
JPS59155121A (ja) 半導体薄膜の製造方法
JPH0533527B2 (2)
JPS59181609A (ja) 半導体装置の製造方法
JPH04242958A (ja) 半導体基板の製造方法
JPH05299349A (ja) Ｓｏｉ基板の製造方法
JPS59228713A (ja) 半導体装置の製造方法
JPH0336312B2 (2)
JPH04373171A (ja) 半導体素子の作製方法
JPH0396223A (ja) Ｓｏｉ構造の形成方法
JPS6065523A (ja) 半導体膜の製造方法
JPH0795550B2 (ja) 半導体装置
JPS60126813A (ja) 半導体装置の製造方法
JPS5825222A (ja) 半導体装置の製造方法