JPS6028223A - 半導体結晶薄膜の製造方法 - Google Patents

半導体結晶薄膜の製造方法

Info

Publication number
JPS6028223A
JPS6028223A JP58135906A JP13590683A JPS6028223A JP S6028223 A JPS6028223 A JP S6028223A JP 58135906 A JP58135906 A JP 58135906A JP 13590683 A JP13590683 A JP 13590683A JP S6028223 A JPS6028223 A JP S6028223A
Authority
JP
Japan
Prior art keywords
thin film
silicon
film
semiconductor
semiconductor crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58135906A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0570928B2 (2
Inventor
Toshio Yoshii
俊夫 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58135906A priority Critical patent/JPS6028223A/ja
Publication of JPS6028223A publication Critical patent/JPS6028223A/ja
Publication of JPH0570928B2 publication Critical patent/JPH0570928B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3822—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing

Landscapes

  • Recrystallisation Techniques (AREA)
JP58135906A 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法 Granted JPS6028223A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58135906A JPS6028223A (ja) 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58135906A JPS6028223A (ja) 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6028223A true JPS6028223A (ja) 1985-02-13
JPH0570928B2 JPH0570928B2 (2) 1993-10-06

Family

ID=15162589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58135906A Granted JPS6028223A (ja) 1983-07-27 1983-07-27 半導体結晶薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6028223A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693324B2 (en) * 1996-04-26 2004-02-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a thin film transistor and manufacturing method thereof
KR100843741B1 (ko) 2007-03-31 2008-07-04 동국대학교 산학협력단 실리콘적층 사파이어 박막의 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693324B2 (en) * 1996-04-26 2004-02-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a thin film transistor and manufacturing method thereof
KR100843741B1 (ko) 2007-03-31 2008-07-04 동국대학교 산학협력단 실리콘적층 사파이어 박막의 제조방법

Also Published As

Publication number Publication date
JPH0570928B2 (2) 1993-10-06

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