JPH0618198B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number: JPH0618198B2
Authority: JP; Japan
Prior art keywords: region; oxide film; polycrystalline silicon; layer; film
Prior art date: 1984-02-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP59025029A

Other languages

English (en)

Japanese (ja)

Other versions

JPS60170257A (ja

Inventor

和郎中里

徹中村

正高加藤

隆博岡部

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-02-15

Filing date

1984-02-15

Publication date

1994-03-09

1984-02-15 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1984-02-15 Priority to JP59025029A priority Critical patent/JPH0618198B2/ja

1985-02-15 Priority to EP85101688A priority patent/EP0152116B1/fr

1985-02-15 Priority to DE8585101688T priority patent/DE3581417D1/de

1985-09-03 Publication of JPS60170257A publication Critical patent/JPS60170257A/ja

1987-04-20 Priority to US07/040,125 priority patent/US4769687A/en

1994-03-09 Publication of JPH0618198B2 publication Critical patent/JPH0618198B2/ja

2009-03-09 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
- H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
- H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
- H10D62/184—Base regions of bipolar transistors, e.g. BJTs or IGBTs of lateral BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

Bipolar Transistors (AREA)

JP59025029A 1984-02-15 1984-02-15 半導体装置 Expired - Lifetime JPH0618198B2 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP59025029A JPH0618198B2 (ja)	1984-02-15	1984-02-15	半導体装置
EP85101688A EP0152116B1 (fr)	1984-02-15	1985-02-15	Transistor bipolaire latéral et son procédé de fabrication
DE8585101688T DE3581417D1 (de)	1984-02-15	1985-02-15	Lateraler bipolarer transistor und verfahren zu seiner herstellung.
US07/040,125 US4769687A (en)	1984-02-15	1987-04-20	Lateral bipolar transistor and method of producing the same

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59025029A JPH0618198B2 (ja)	1984-02-15	1984-02-15	半導体装置

Publications (2)

Publication Number	Publication Date
JPS60170257A JPS60170257A (ja)	1985-09-03
JPH0618198B2 true JPH0618198B2 (ja)	1994-03-09

Family

ID=12154481

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59025029A Expired - Lifetime JPH0618198B2 (ja)	1984-02-15	1984-02-15	半導体装置

Country Status (4)

Country	Link
US (1)	US4769687A (fr)
EP (1)	EP0152116B1 (fr)
JP (1)	JPH0618198B2 (fr)
DE (1)	DE3581417D1 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS561556A (en) *	1979-06-18	1981-01-09	Hitachi Ltd	Semiconductor device
US6372596B1 (en) *	1985-01-30	2002-04-16	Texas Instruments Incorporated	Method of making horizontal bipolar transistor with insulated base structure
DE3545244A1 (de) *	1985-12-20	1987-06-25	Licentia Gmbh	Strukturierter halbleiterkoerper
JP2503460B2 (ja) *	1986-12-01	1996-06-05	三菱電機株式会社	バイポ−ラトランジスタおよびその製造方法
DE3681291D1 (de) *	1986-12-18	1991-10-10	Itt Ind Gmbh Deutsche	Kollektorkontakt eines integrierten bipolartransistors.
NL8700640A (nl) *	1987-03-18	1988-10-17	Philips Nv	Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
JPS63292673A (ja) *	1987-05-25	1988-11-29	Nec Corp	横型バイポ−ラトランジスタ
US4860077A (en) *	1987-09-28	1989-08-22	Motorola, Inc.	Vertical semiconductor device having a sidewall emitter
US4939474A (en) *	1988-08-26	1990-07-03	At&T Bell Laboratories	Semiconductor optical amplifier with shortened gain recovery time
GB2230134A (en) *	1989-04-05	1990-10-10	Philips Nv	A method of manufacturing a semiconductor device
US5043786A (en) *	1989-04-13	1991-08-27	International Business Machines Corporation	Lateral transistor and method of making same
US4965217A (en) *	1989-04-13	1990-10-23	International Business Machines Corporation	Method of making a lateral transistor
US5289024A (en) *	1990-08-07	1994-02-22	National Semiconductor Corporation	Bipolar transistor with diffusion compensation
JP3202460B2 (ja) *	1993-12-21	2001-08-27	株式会社東芝	半導体装置およびその製造方法
US6232649B1 (en) *	1994-12-12	2001-05-15	Hyundai Electronics America	Bipolar silicon-on-insulator structure and process
DE19741972C1 (de)	1997-09-23	1998-09-17	Siemens Ag	SOI-Zelle und Verfahren zu deren Herstellung
US6853048B1 (en) *	2000-08-11	2005-02-08	Agere Systems Inc.	Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereof
US6864547B2 (en)	2001-06-15	2005-03-08	Agere Systems Inc.	Semiconductor device having a ghost source/drain region and a method of manufacture therefor
US6958518B2 (en) *	2001-06-15	2005-10-25	Agere Systems Inc.	Semiconductor device having at least one source/drain region formed on an isolation region and a method of manufacture therefor
US6809386B2 (en) *	2002-08-29	2004-10-26	Micron Technology, Inc.	Cascode I/O driver with improved ESD operation
US7692483B2 (en) *	2007-10-10	2010-04-06	Atmel Corporation	Apparatus and method for preventing snap back in integrated circuits
US8085604B2 (en) *	2008-12-12	2011-12-27	Atmel Corporation	Snap-back tolerant integrated circuits

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3600651A (en) *	1969-12-08	1971-08-17	Fairchild Camera Instr Co	Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
JPS5244186A (en) *	1975-10-06	1977-04-06	Hitachi Ltd	Semiconductor intergrated circuit device
US4333227A (en) *	1979-11-29	1982-06-08	International Business Machines Corporation	Process for fabricating a self-aligned micrometer bipolar transistor device
US4338138A (en) *	1980-03-03	1982-07-06	International Business Machines Corporation	Process for fabricating a bipolar transistor
US4339767A (en) *	1980-05-05	1982-07-13	International Business Machines Corporation	High performance PNP and NPN transistor structure
US4508579A (en) *	1981-03-30	1985-04-02	International Business Machines Corporation	Lateral device structures using self-aligned fabrication techniques

1984
- 1984-02-15 JP JP59025029A patent/JPH0618198B2/ja not_active Expired - Lifetime
1985
- 1985-02-15 EP EP85101688A patent/EP0152116B1/fr not_active Expired
- 1985-02-15 DE DE8585101688T patent/DE3581417D1/de not_active Expired - Lifetime
1987
- 1987-04-20 US US07/040,125 patent/US4769687A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0152116B1 (fr)	1991-01-23
EP0152116A3 (en)	1986-12-30
JPS60170257A (ja)	1985-09-03
EP0152116A2 (fr)	1985-08-21
DE3581417D1 (de)	1991-02-28
US4769687A (en)	1988-09-06

Publication	Publication Date	Title
JPH0618198B2 (ja)	1994-03-09	半導体装置
JPS62588B2 (fr)	1987-01-08
JPH0123949B2 (fr)	1989-05-09
US4631568A (en)	1986-12-23	Bipolar transistor construction
US4713355A (en)	1987-12-15	Bipolar transistor construction
JP3923620B2 (ja)	2007-06-06	半導体基板の製造方法
JPH07130898A (ja)	1995-05-19	半導体装置およびその製造方法
JPH0128507B2 (fr)	1989-06-02
JPH0626213B2 (ja)	1994-04-06	半導体装置
KR0137568B1 (ko)	1998-04-28	바이폴라 트랜지스터의 제조방법
JP3104335B2 (ja)	2000-10-30	半導体装置の製造方法
JPH0128508B2 (fr)	1989-06-02
JP2943855B2 (ja)	1999-08-30	半導体装置の製造方法
JP2594697B2 (ja)	1997-03-26	半導体装置の製造方法
JPS644351B2 (fr)	1989-01-25
KR100255127B1 (ko)	2000-05-01	횡형 구조의 바이폴라 트랜지스터의 제조방법
JP2579999B2 (ja)	1997-02-12	半導体装置の製造方法
JPH0828368B2 (ja)	1996-03-21	半導体装置の製造方法
JPH038582B2 (fr)	1991-02-06
JPS5980968A (ja)	1984-05-10	半導体集積回路装置の製造方法
JPS63114261A (ja)	1988-05-19	トランジスタ用の自己整合型ベース分路
JPH02246223A (ja)	1990-10-02	半導体装置の製造方法
JPH0715989B2 (ja)	1995-02-22	半導体装置
JPH0687496B2 (ja)	1994-11-02	バイポ−ラ集積回路
JPH0317374B2 (fr)	1991-03-07