JPS51111090A - Semiconductor device manufacturing process - Google Patents
Semiconductor device manufacturing processInfo
- Publication number
- JPS51111090A JPS51111090A JP3558375A JP3558375A JPS51111090A JP S51111090 A JPS51111090 A JP S51111090A JP 3558375 A JP3558375 A JP 3558375A JP 3558375 A JP3558375 A JP 3558375A JP S51111090 A JPS51111090 A JP S51111090A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing process
- device manufacturing
- high polymer
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To increase the adhesion of the high polymer plastic membrane and the wiring layer. The pertans to the manufacture of semiconductor devices with multilayer wiring using high polymer insulation membranes such as polymide as insulation between the wiring layers.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3558375A JPS51111090A (en) | 1975-03-26 | 1975-03-26 | Semiconductor device manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3558375A JPS51111090A (en) | 1975-03-26 | 1975-03-26 | Semiconductor device manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51111090A true JPS51111090A (en) | 1976-10-01 |
Family
ID=12445777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3558375A Pending JPS51111090A (en) | 1975-03-26 | 1975-03-26 | Semiconductor device manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51111090A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5373075A (en) * | 1976-12-13 | 1978-06-29 | Fujitsu Ltd | Treatment method for wafer surface |
| JPS5745922A (en) * | 1980-09-02 | 1982-03-16 | Fujitsu Ltd | Forming method for semiconductor single crystalline layer by energy beam irradiation |
| JPS63202043A (en) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1975
- 1975-03-26 JP JP3558375A patent/JPS51111090A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5373075A (en) * | 1976-12-13 | 1978-06-29 | Fujitsu Ltd | Treatment method for wafer surface |
| JPS5745922A (en) * | 1980-09-02 | 1982-03-16 | Fujitsu Ltd | Forming method for semiconductor single crystalline layer by energy beam irradiation |
| JPS63202043A (en) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
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