JPS51111090A - Semiconductor device manufacturing process - Google Patents
Semiconductor device manufacturing processInfo
- Publication number
- JPS51111090A JPS51111090A JP3558375A JP3558375A JPS51111090A JP S51111090 A JPS51111090 A JP S51111090A JP 3558375 A JP3558375 A JP 3558375A JP 3558375 A JP3558375 A JP 3558375A JP S51111090 A JPS51111090 A JP S51111090A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing process
- device manufacturing
- high polymer
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3558375A JPS51111090A (en) | 1975-03-26 | 1975-03-26 | Semiconductor device manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3558375A JPS51111090A (en) | 1975-03-26 | 1975-03-26 | Semiconductor device manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51111090A true JPS51111090A (en) | 1976-10-01 |
Family
ID=12445777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3558375A Pending JPS51111090A (en) | 1975-03-26 | 1975-03-26 | Semiconductor device manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51111090A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5373075A (en) * | 1976-12-13 | 1978-06-29 | Fujitsu Ltd | Treatment method for wafer surface |
| JPS5745922A (en) * | 1980-09-02 | 1982-03-16 | Fujitsu Ltd | Forming method for semiconductor single crystalline layer by energy beam irradiation |
| JPS63202043A (ja) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1975
- 1975-03-26 JP JP3558375A patent/JPS51111090A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5373075A (en) * | 1976-12-13 | 1978-06-29 | Fujitsu Ltd | Treatment method for wafer surface |
| JPS5745922A (en) * | 1980-09-02 | 1982-03-16 | Fujitsu Ltd | Forming method for semiconductor single crystalline layer by energy beam irradiation |
| JPS63202043A (ja) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
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