JPS5366164A - Susceptor for semiconductor wafer processing - Google Patents
Susceptor for semiconductor wafer processingInfo
- Publication number
- JPS5366164A JPS5366164A JP14126776A JP14126776A JPS5366164A JP S5366164 A JPS5366164 A JP S5366164A JP 14126776 A JP14126776 A JP 14126776A JP 14126776 A JP14126776 A JP 14126776A JP S5366164 A JPS5366164 A JP S5366164A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- semiconductor wafer
- wafer processing
- sio
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To control sufficiently the separation of polluting materials from a susceptor by forming two layers - which include Si3N4 out of poly - Si, SiO2 and Si3N4 - on the SiC layer covering the susceptor main body.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14126776A JPS5366164A (en) | 1976-11-26 | 1976-11-26 | Susceptor for semiconductor wafer processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14126776A JPS5366164A (en) | 1976-11-26 | 1976-11-26 | Susceptor for semiconductor wafer processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5366164A true JPS5366164A (en) | 1978-06-13 |
Family
ID=15287914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14126776A Pending JPS5366164A (en) | 1976-11-26 | 1976-11-26 | Susceptor for semiconductor wafer processing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5366164A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS631327U (en) * | 1986-06-23 | 1988-01-07 | ||
| JPS6477930A (en) * | 1987-09-18 | 1989-03-23 | Daido Oxygen | Cvd device |
| US6383302B2 (en) * | 1997-12-02 | 2002-05-07 | Nec Corporation | Apparatus and method for manufacturing semiconductor device |
| US6770144B2 (en) * | 2000-07-25 | 2004-08-03 | International Business Machines Corporation | Multideposition SACVD reactor |
| US6955720B2 (en) * | 1999-03-23 | 2005-10-18 | Asml Holding N.V. | Plasma deposition of spin chucks to reduce contamination of Silicon wafers |
| WO2008058270A3 (en) * | 2006-11-10 | 2008-07-10 | Saint Gobain Ceramics | A susceptor and method of forming a led device using such susceptor |
-
1976
- 1976-11-26 JP JP14126776A patent/JPS5366164A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS631327U (en) * | 1986-06-23 | 1988-01-07 | ||
| JPS6477930A (en) * | 1987-09-18 | 1989-03-23 | Daido Oxygen | Cvd device |
| US6383302B2 (en) * | 1997-12-02 | 2002-05-07 | Nec Corporation | Apparatus and method for manufacturing semiconductor device |
| US6955720B2 (en) * | 1999-03-23 | 2005-10-18 | Asml Holding N.V. | Plasma deposition of spin chucks to reduce contamination of Silicon wafers |
| US6770144B2 (en) * | 2000-07-25 | 2004-08-03 | International Business Machines Corporation | Multideposition SACVD reactor |
| WO2008058270A3 (en) * | 2006-11-10 | 2008-07-10 | Saint Gobain Ceramics | A susceptor and method of forming a led device using such susceptor |
| JP2010509778A (en) * | 2006-11-10 | 2010-03-25 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | Susceptor and method for forming LED device using susceptor |
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