JPS5457980A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5457980A
JPS5457980A JP12482677A JP12482677A JPS5457980A JP S5457980 A JPS5457980 A JP S5457980A JP 12482677 A JP12482677 A JP 12482677A JP 12482677 A JP12482677 A JP 12482677A JP S5457980 A JPS5457980 A JP S5457980A
Authority
JP
Japan
Prior art keywords
region
wiring
film
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12482677A
Other languages
Japanese (ja)
Other versions
JPS6020899B2 (en
Inventor
Tetsuo Kumezawa
Hiroshi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP52124826A priority Critical patent/JPS6020899B2/en
Publication of JPS5457980A publication Critical patent/JPS5457980A/en
Publication of JPS6020899B2 publication Critical patent/JPS6020899B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To avoid useless power consumption, by reducing the wiring capacitance between the substrate and wiring, through the use of the operating region as floating condition by forming the electrode wiring via thick insulation film on the operating region formed on the semiconductor substrate. CONSTITUTION:On the N<+> type operating region 6 of the P type Si substrate 1 and on one P<+> type channel stopper region 5, Al wiring 2 is coated via thick SiO2 film 3, and a part of it is used for the bonding pad 4 connected to the external lead. Next, the N<+> type operating region 7 is placed at remote location from the region 6, and thin Si operating region 7 bridging at the end of the region 7 and in contact with the film 3 is provided between the regions 6 and 7, and the gate electrode 9 is fitted on it. After that, thick SiO2 film is placed from the end of the region 7 to another P<+> type channel stopper region 5, and the electrode 11 leading on the film from the region 7 is attached. Thus, the region 6 is made at floating state and the capacitance between the wiring 2 and the substrate 1 is reduced.
JP52124826A 1977-10-18 1977-10-18 semiconductor equipment Expired JPS6020899B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52124826A JPS6020899B2 (en) 1977-10-18 1977-10-18 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52124826A JPS6020899B2 (en) 1977-10-18 1977-10-18 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5457980A true JPS5457980A (en) 1979-05-10
JPS6020899B2 JPS6020899B2 (en) 1985-05-24

Family

ID=14895051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52124826A Expired JPS6020899B2 (en) 1977-10-18 1977-10-18 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6020899B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6469034A (en) * 1987-08-26 1989-03-15 Philips Nv Semiconductor integrated circuit with decoupled d.c. wiring

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6469034A (en) * 1987-08-26 1989-03-15 Philips Nv Semiconductor integrated circuit with decoupled d.c. wiring

Also Published As

Publication number Publication date
JPS6020899B2 (en) 1985-05-24

Similar Documents

Publication Publication Date Title
JPS55163877A (en) Semiconductor integrated circuit device
JPS5457980A (en) Semiconductor device
JPS53108391A (en) Semiconductor device
JPS5688366A (en) Semiconductor device
JPS5346288A (en) Mis type semiconductor device
JPS538076A (en) Production of mis semiconductor device
JPS6489372A (en) Semiconductor device
JPS52130580A (en) High densityintegrated circuit device
JPS56108267A (en) Insulated-gate field-effect semiconductor device
JPS5366179A (en) Semiconductor device
JPS52117079A (en) Preparation of semiconductor device
JPS6437876A (en) Manufacture of semiconductor device
JPS5325354A (en) Semiconductor device
JPS5410668A (en) Production of semiconductor device
JPS5399837A (en) Semiconductor integrated circuit device of mis type
JPS5660052A (en) Semiconductor memory device
JPS52147983A (en) Insulation gate type semiconductor device
JPS566464A (en) Semiconductor device and manufacture thereof
JPS57202750A (en) Semiconductor device and manufacture thereof
JPS5754375A (en) Mis semiconductor memeory device
JPS5211772A (en) Semiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS52127176A (en) Semiconductor device and its manufacture
JPS5769774A (en) Semiconductor device
JPS5368180A (en) Semiconductor device