JPS57102012A - Liquid phase epitaxy method - Google Patents

Liquid phase epitaxy method

Info

Publication number
JPS57102012A
JPS57102012A JP17838080A JP17838080A JPS57102012A JP S57102012 A JPS57102012 A JP S57102012A JP 17838080 A JP17838080 A JP 17838080A JP 17838080 A JP17838080 A JP 17838080A JP S57102012 A JPS57102012 A JP S57102012A
Authority
JP
Japan
Prior art keywords
layer
inp
groove
component layer
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17838080A
Other languages
Japanese (ja)
Inventor
Yorimitsu Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17838080A priority Critical patent/JPS57102012A/en
Publication of JPS57102012A publication Critical patent/JPS57102012A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To form a fine groove in an InP layer by a method wherein a four- component layer is formed on the InP layer and removed by melting-back. CONSTITUTION:An n-type buffer InP layer 12 is made grown on an n-type InP substrate 11 and a doped InGaAsP layer 13 is made grown in order to make a groove on the layer 12. Then the composition of the four-component layer 13 is selected in such a manner that its corresponding wave length is, for instance, 1.16mum and the four-component layer 13 is given contact with InP solution. Then Ga and As in the four-component layer 13 are dissolved into the InP solution, so that the four-component layer is melted back. When the whole four-component layer 13 is melted back, the InP solution which contains Ga and As dissolves the InP layer, so that a groove 15 is formed. With above method, a very fine groove can be made by melting-back, so that burying of an activated layer into the groove can be realized with high reproducibility.
JP17838080A 1980-12-17 1980-12-17 Liquid phase epitaxy method Pending JPS57102012A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17838080A JPS57102012A (en) 1980-12-17 1980-12-17 Liquid phase epitaxy method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17838080A JPS57102012A (en) 1980-12-17 1980-12-17 Liquid phase epitaxy method

Publications (1)

Publication Number Publication Date
JPS57102012A true JPS57102012A (en) 1982-06-24

Family

ID=16047472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17838080A Pending JPS57102012A (en) 1980-12-17 1980-12-17 Liquid phase epitaxy method

Country Status (1)

Country Link
JP (1) JPS57102012A (en)

Similar Documents

Publication Publication Date Title
JPS549592A (en) Luminous semiconductor element
JPS57102012A (en) Liquid phase epitaxy method
JPS5493380A (en) Semiconductor light emitting device
SU1009242A1 (en) The method of producing pn-structures of arsenide gallium
GB1526898A (en) Production of epitaxial layers on monocrystalline substrates
JPS524782A (en) Liquid phase epitaxial growth method
JPS52114269A (en) Selective liquid growing method
JPS5211860A (en) Liquid phase epitaxial device
JPS52106673A (en) Crystal growing method and device thereof
JPS57106090A (en) Manufacture of photo semiconductor
JPS52135264A (en) Liquid phase epitaxial growth method
JPS55160426A (en) Manufacture of semiconductor device
JPS56148821A (en) Liquid phase epitaxial growth
JPS52120763A (en) Silicon epitaxial growth method
JPS5289599A (en) Liquid phase eptaxial growth
JPS5781230A (en) Optical modulator
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS51120667A (en) Crystal growing method
JPS52155189A (en) Multiple layer crystal growth
JPS5319777A (en) Semiconductor laser
JPS52114268A (en) Selective liquid growing method
JPS57178394A (en) Manufacture of semiconductor light emitting device
JPS5335699A (en) Growing method for heteroepitaxial membrane
JPS56148822A (en) Liquid phase crystal crowth
JPS5527651A (en) Method of forming electrode for p-type inp crystal surface