JPS5769746A - Flattening method for wafer for semiconductor device - Google Patents

Flattening method for wafer for semiconductor device

Info

Publication number
JPS5769746A
JPS5769746A JP55145465A JP14546580A JPS5769746A JP S5769746 A JPS5769746 A JP S5769746A JP 55145465 A JP55145465 A JP 55145465A JP 14546580 A JP14546580 A JP 14546580A JP S5769746 A JPS5769746 A JP S5769746A
Authority
JP
Japan
Prior art keywords
wafer
semiconductor device
reliability
projection
reducing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55145465A
Other languages
Japanese (ja)
Other versions
JPH02851B2 (en
Inventor
Kazumasa Shigematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55145465A priority Critical patent/JPS5769746A/en
Publication of JPS5769746A publication Critical patent/JPS5769746A/en
Publication of JPH02851B2 publication Critical patent/JPH02851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To flatten the surface of a wafer and to improve the reliability of the wafer by forming completely a vapor phase grown film, then forming a viscous wear reducing agent thin film on the surface, pressing a flat plate in high hardness to break physically the projection or the like to pulverized particles, cleaning and drying them. CONSTITUTION:A vapor phase grown film 2 is provided on a substrate 1. A wear reducing agent 3 made of chemically stable liquid with high vescosity of polyvinyl alcohol is coated thinly on the surface. A flat plate 4 having hardness is pressed on the substrate 1 to break a projection 20 into finely pulverized particles. The particles are then cleaned and dried. In this manner, the surface of the wafer is flattened to enhance the reliability of the semiconductor device.
JP55145465A 1980-10-17 1980-10-17 Flattening method for wafer for semiconductor device Granted JPS5769746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55145465A JPS5769746A (en) 1980-10-17 1980-10-17 Flattening method for wafer for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55145465A JPS5769746A (en) 1980-10-17 1980-10-17 Flattening method for wafer for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5769746A true JPS5769746A (en) 1982-04-28
JPH02851B2 JPH02851B2 (en) 1990-01-09

Family

ID=15385861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55145465A Granted JPS5769746A (en) 1980-10-17 1980-10-17 Flattening method for wafer for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5769746A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128516A (en) * 1985-11-29 1987-06-10 Shin Etsu Handotai Co Ltd Removing method for projection of semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128516A (en) * 1985-11-29 1987-06-10 Shin Etsu Handotai Co Ltd Removing method for projection of semiconductor wafer

Also Published As

Publication number Publication date
JPH02851B2 (en) 1990-01-09

Similar Documents

Publication Publication Date Title
JPS5380966A (en) Manufacture of electrode fdr semiconductor device
JPS56164535A (en) Manufacture of semicondutor element
JPS52155494A (en) Process for w orking parallel plane of wafer
JPS5419363A (en) Die bonding method of semiconductor devices
JPS5276343A (en) Method of manufacturing goods with abrasion resistant film
JPS5381069A (en) Production of susceptor in cvd device
JPS5437581A (en) Wafer etching device
JPS6412561A (en) Application of heat transfer compound
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5367706A (en) Method of cleaning and cleaning agent
JPS57101666A (en) Apparatus for preparing vapor deposition film
JPS5441676A (en) Photo resist coating unit
JPS53112673A (en) Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution
JPS56166373A (en) Method for smoothing vapor-deposited film surface
JPS5636127A (en) Treatment of wafer-surface
JPS5376692A (en) Semiconductor light emitting device
JPS52156551A (en) Semiconductor wafer breaking method
JPS543473A (en) Manufacture of semiconductor device
JPS5283244A (en) Preparation of liquid crystal cell
JPS57169257A (en) Exfoliating device for semiconductor element
JPS5374371A (en) Semiconductor device
JPS5313645A (en) Method of adhesion using electrically conductive adhesive
JPS5364475A (en) Semiconductor wafer transfer method
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS5211765A (en) Method of manufacturing semiconductor device