JPS58108737A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58108737A JPS58108737A JP57200959A JP20095982A JPS58108737A JP S58108737 A JPS58108737 A JP S58108737A JP 57200959 A JP57200959 A JP 57200959A JP 20095982 A JP20095982 A JP 20095982A JP S58108737 A JPS58108737 A JP S58108737A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon
- film
- junction
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
- H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57200959A JPS58108737A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57200959A JPS58108737A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51114052A Division JPS6035818B2 (ja) | 1976-09-22 | 1976-09-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58108737A true JPS58108737A (ja) | 1983-06-28 |
| JPS6229889B2 JPS6229889B2 (2) | 1987-06-29 |
Family
ID=16433150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57200959A Granted JPS58108737A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58108737A (2) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50154077A (2) * | 1974-05-22 | 1975-12-11 | ||
| JPS5140773A (en) * | 1974-07-25 | 1976-04-05 | Siemens Ag | Handotaidebaisuno seizohoho |
-
1982
- 1982-11-15 JP JP57200959A patent/JPS58108737A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50154077A (2) * | 1974-05-22 | 1975-12-11 | ||
| JPS5140773A (en) * | 1974-07-25 | 1976-04-05 | Siemens Ag | Handotaidebaisuno seizohoho |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6229889B2 (2) | 1987-06-29 |
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