JPS58111369A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58111369A
JPS58111369A JP56215649A JP21564981A JPS58111369A JP S58111369 A JPS58111369 A JP S58111369A JP 56215649 A JP56215649 A JP 56215649A JP 21564981 A JP21564981 A JP 21564981A JP S58111369 A JPS58111369 A JP S58111369A
Authority
JP
Japan
Prior art keywords
region
base body
type
substrate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56215649A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312458B2 (2
Inventor
Masami Yamaoka
山岡　正美
Masaharu Toyoshima
豊島　正治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP56215649A priority Critical patent/JPS58111369A/ja
Priority to DE8282111854T priority patent/DE3276091D1/de
Priority to EP82111854A priority patent/EP0083060B2/en
Publication of JPS58111369A publication Critical patent/JPS58111369A/ja
Priority to US07/407,157 priority patent/US5596217A/en
Publication of JPH0312458B2 publication Critical patent/JPH0312458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56215649A 1981-12-24 1981-12-24 半導体装置 Granted JPS58111369A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56215649A JPS58111369A (ja) 1981-12-24 1981-12-24 半導体装置
DE8282111854T DE3276091D1 (en) 1981-12-24 1982-12-21 Semiconductor device including overvoltage protection diode
EP82111854A EP0083060B2 (en) 1981-12-24 1982-12-21 Semiconductor device including overvoltage protection diode
US07/407,157 US5596217A (en) 1981-12-24 1989-09-14 Semiconductor device including overvoltage protection diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56215649A JPS58111369A (ja) 1981-12-24 1981-12-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS58111369A true JPS58111369A (ja) 1983-07-02
JPH0312458B2 JPH0312458B2 (2) 1991-02-20

Family

ID=16675895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56215649A Granted JPS58111369A (ja) 1981-12-24 1981-12-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS58111369A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160665A (ja) * 1984-01-31 1985-08-22 Nec Kansai Ltd 半導体装置
JPS61123549U (2) * 1985-01-22 1986-08-04
WO1993019490A1 (fr) * 1992-03-23 1993-09-30 Rohm Co., Ltd. Diode de regulation de tension

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5122379A (2) * 1974-08-19 1976-02-23 Sony Corp
JPS5556656A (en) * 1978-10-23 1980-04-25 Nec Corp Semiconductor device
JPS5580352A (en) * 1978-12-12 1980-06-17 Fuji Electric Co Ltd Transistor with high breakdown voltage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5122379A (2) * 1974-08-19 1976-02-23 Sony Corp
JPS5556656A (en) * 1978-10-23 1980-04-25 Nec Corp Semiconductor device
JPS5580352A (en) * 1978-12-12 1980-06-17 Fuji Electric Co Ltd Transistor with high breakdown voltage

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160665A (ja) * 1984-01-31 1985-08-22 Nec Kansai Ltd 半導体装置
JPS61123549U (2) * 1985-01-22 1986-08-04
WO1993019490A1 (fr) * 1992-03-23 1993-09-30 Rohm Co., Ltd. Diode de regulation de tension
US5475245A (en) * 1992-03-23 1995-12-12 Rohm Co., Ltd. Field-effect voltage regulator diode

Also Published As

Publication number Publication date
JPH0312458B2 (2) 1991-02-20

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