JPS58218127A - 半導体装置の保護被膜材料用組成物 - Google Patents

半導体装置の保護被膜材料用組成物

Info

Publication number
JPS58218127A
JPS58218127A JP57101027A JP10102782A JPS58218127A JP S58218127 A JPS58218127 A JP S58218127A JP 57101027 A JP57101027 A JP 57101027A JP 10102782 A JP10102782 A JP 10102782A JP S58218127 A JPS58218127 A JP S58218127A
Authority
JP
Japan
Prior art keywords
semiconductor device
composition
protective coating
coating material
sulfonamide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57101027A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6352772B2 (fr
Inventor
Tonobu Sato
佐藤 任延
Shunichiro Uchimura
内村 俊一郎
Isao Uchigasaki
内ケ崎 功
Daisuke Makino
大輔 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP57101027A priority Critical patent/JPS58218127A/ja
Priority to GB08315457A priority patent/GB2123017B/en
Priority to US06/501,151 priority patent/US4497922A/en
Publication of JPS58218127A publication Critical patent/JPS58218127A/ja
Priority to MY478/86A priority patent/MY8600478A/xx
Publication of JPS6352772B2 publication Critical patent/JPS6352772B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/54Nitrogen-containing linkages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6342Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
JP57101027A 1982-06-11 1982-06-11 半導体装置の保護被膜材料用組成物 Granted JPS58218127A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57101027A JPS58218127A (ja) 1982-06-11 1982-06-11 半導体装置の保護被膜材料用組成物
GB08315457A GB2123017B (en) 1982-06-11 1983-06-06 Polyamide acid-silicone composition for forming protective films in semiconductor devices
US06/501,151 US4497922A (en) 1982-06-11 1983-06-06 Compositions of materials for forming protective film in semiconductor device
MY478/86A MY8600478A (en) 1982-06-11 1986-12-30 Composition of materials for forming protective film in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57101027A JPS58218127A (ja) 1982-06-11 1982-06-11 半導体装置の保護被膜材料用組成物

Publications (2)

Publication Number Publication Date
JPS58218127A true JPS58218127A (ja) 1983-12-19
JPS6352772B2 JPS6352772B2 (fr) 1988-10-20

Family

ID=14289701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57101027A Granted JPS58218127A (ja) 1982-06-11 1982-06-11 半導体装置の保護被膜材料用組成物

Country Status (4)

Country Link
US (1) US4497922A (fr)
JP (1) JPS58218127A (fr)
GB (1) GB2123017B (fr)
MY (1) MY8600478A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154646A (ja) * 1985-12-26 1987-07-09 Matsushita Electronics Corp 半導体装置の製造方法
US5094919A (en) * 1988-06-30 1992-03-10 Nippon Steel Chemical Co., Ltd. Polyimide copolymers and process for preparing the same
JP2013098393A (ja) * 2011-11-01 2013-05-20 Fujitsu Ltd 電子装置の製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240730A (ja) * 1984-05-15 1985-11-29 Chisso Corp 可溶性イミドオリゴマーの製法
US4675350A (en) * 1984-11-13 1987-06-23 Westinghouse Electric Corp. Compatible self-crosslinking poly (amide-imide) polyepoxide resin blends and laminates made therewith
US4741939A (en) * 1985-10-23 1988-05-03 Westinghouse Electric Corp. Compatible self-crosslinking poly (amide-imide) polyepoxide resin blends and laminates made therewith
US4847358A (en) * 1986-09-19 1989-07-11 Hitachi Chemical Company, Ltd. Process for producing polyamide acid having siloxane bonds and polyimide having siloxane bonds and isoindoloquinazolinedione rings
US5260413A (en) * 1990-02-05 1993-11-09 E. I. Du Pont De Nemours And Company Coated, heat-sealable aromatic polyimide film having superior compressive strength
TW294702B (fr) * 1994-03-08 1997-01-01 Sumitomo Bakelite Co
JP2002012666A (ja) * 2000-06-29 2002-01-15 Shin Etsu Chem Co Ltd ポリイミドシリコーン樹脂、その製造方法およびその組成物
JP5346078B2 (ja) * 2008-05-20 2013-11-20 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 熱および寸法安定性ポリイミドフィルム、ならびに、これに関する方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395527A (en) * 1978-05-17 1983-07-26 M & T Chemicals Inc. Siloxane-containing polymers
JPS581685B2 (ja) * 1980-08-27 1983-01-12 日立化成工業株式会社 シロキサン結合を含むポリアミド酸及びシロキサン結合とイソインドロキナゾリンジオン環を有するポリイミドの製造法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154646A (ja) * 1985-12-26 1987-07-09 Matsushita Electronics Corp 半導体装置の製造方法
US5094919A (en) * 1988-06-30 1992-03-10 Nippon Steel Chemical Co., Ltd. Polyimide copolymers and process for preparing the same
JP2013098393A (ja) * 2011-11-01 2013-05-20 Fujitsu Ltd 電子装置の製造方法

Also Published As

Publication number Publication date
GB8315457D0 (en) 1983-07-13
GB2123017B (en) 1985-07-10
MY8600478A (en) 1986-12-31
JPS6352772B2 (fr) 1988-10-20
US4497922A (en) 1985-02-05
GB2123017A (en) 1984-01-25

Similar Documents

Publication Publication Date Title
US4511705A (en) Composition for protective coating material
JPS58218127A (ja) 半導体装置の保護被膜材料用組成物
CN114230792B (zh) 一种正性光敏聚酰亚胺树脂、树脂组合物及其制备方法与应用
JP6848973B2 (ja) 感光性樹脂組成物、その硬化物、層間絶縁膜、表面保護膜及び電子部品
CN102317861A (zh) 正型感光性树脂组合物、和使用它的固化膜、保护膜、绝缘膜、半导体装置以及显示装置
WO2024082896A1 (fr) Résine soluble dans les alcalis, composition de résine photosensible et film durci photosensible
JPH0131699B2 (fr)
US20090208868A1 (en) Positive photosensitive resin composition and method for forming pattern
JP2024018828A (ja) ポリイミド前駆体組成物、ポリイミドフィルムおよびポリイミドフィルム/基材積層体
JPS5976451A (ja) 半導体装置
JPS58152018A (ja) 半導体装置の保護被膜材料用組成物
JPS6037550A (ja) ポジ型感光性耐熱材料
JPWO2018155639A1 (ja) 樹脂組成物、硬化物、パターン硬化物、硬化物の製造方法、層間絶縁膜、表面保護膜及び電子部品
CN116256946A (zh) 感光性树脂组合物、固化浮雕图案的制造方法和半导体装置
JPH0211631A (ja) 半導体保護用樹脂及び半導体
CN114133563A (zh) 聚酰亚胺前体、聚酰亚胺前体组合物、聚酰亚胺膜、其制造方法以及其用途
JPS6335626A (ja) 耐熱性樹脂の製造方法
JPH02261862A (ja) 光重合性樹脂組成物
JPH0673178A (ja) ポリアミック酸及びポリイミド樹脂、これらの製造方法並びに半導体装置保護用材料
KR0159288B1 (ko) 알파선 차폐용 폴리이미드계 접착 조성물의 제조방법
JPS60177659A (ja) 半導体装置の製造方法
KR920002639B1 (ko) 반도체 소자 보호 필름용 조성물
JPH06345866A (ja) シロキサン変性ポリイミド樹脂
JPS5919330A (ja) 半導体装置の層間絶縁または表面保護被膜材料用組成物
WO1991010699A1 (fr) Resine pour proteger des semi-conducteurs