JPS58500679A - プレ−ナトランジスタ構造体 - Google Patents

プレ−ナトランジスタ構造体

Info

Publication number
JPS58500679A
JPS58500679A JP57500570A JP50057082A JPS58500679A JP S58500679 A JPS58500679 A JP S58500679A JP 57500570 A JP57500570 A JP 57500570A JP 50057082 A JP50057082 A JP 50057082A JP S58500679 A JPS58500679 A JP S58500679A
Authority
JP
Japan
Prior art keywords
region
conductivity type
passivation layer
transistor structure
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57500570A
Other languages
English (en)
Japanese (ja)
Inventor
ミヒエル・ハルトム−ト
Original Assignee
ロ−ベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ロ−ベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング filed Critical ロ−ベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング
Publication of JPS58500679A publication Critical patent/JPS58500679A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57500570A 1981-05-06 1982-02-05 プレ−ナトランジスタ構造体 Pending JPS58500679A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE31178049GB 1981-05-06
DE19813117804 DE3117804A1 (de) 1981-05-06 1981-05-06 "planare transistorstruktur"

Publications (1)

Publication Number Publication Date
JPS58500679A true JPS58500679A (ja) 1983-04-28

Family

ID=6131535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57500570A Pending JPS58500679A (ja) 1981-05-06 1982-02-05 プレ−ナトランジスタ構造体

Country Status (4)

Country Link
EP (1) EP0077778A1 (de)
JP (1) JPS58500679A (de)
DE (1) DE3117804A1 (de)
WO (1) WO1982003949A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3276091D1 (en) * 1981-12-24 1987-05-21 Nippon Denso Co Semiconductor device including overvoltage protection diode
DE3201545A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Planare halbleiteranordnung
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
EP0309784A1 (de) * 1987-09-30 1989-04-05 Siemens Aktiengesellschaft Anschlussstreifenstruktur für Bipolar-Transistoren
EP0360036B1 (de) * 1988-09-20 1994-06-01 Siemens Aktiengesellschaft Planarer pn-Übergang hoher Spannungsfestigkeit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841391A (de) * 1971-10-01 1973-06-16
JPS50137478A (de) * 1974-04-18 1975-10-31
JPS5412793A (en) * 1977-06-29 1979-01-30 Mitsubishi Electric Corp Concentration measuring method of solutions
JPS5556656A (en) * 1978-10-23 1980-04-25 Nec Corp Semiconductor device
JPS5674961A (en) * 1979-11-22 1981-06-20 Hitachi Ltd Smiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1249812A (en) * 1969-05-29 1971-10-13 Ferranti Ltd Improvements relating to semiconductor devices
GB1348697A (en) * 1970-07-31 1974-03-20 Fairchild Camera Instr Co Semiconductors
JPS573225B2 (de) * 1974-08-19 1982-01-20

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841391A (de) * 1971-10-01 1973-06-16
JPS50137478A (de) * 1974-04-18 1975-10-31
JPS5412793A (en) * 1977-06-29 1979-01-30 Mitsubishi Electric Corp Concentration measuring method of solutions
JPS5556656A (en) * 1978-10-23 1980-04-25 Nec Corp Semiconductor device
JPS5674961A (en) * 1979-11-22 1981-06-20 Hitachi Ltd Smiconductor device

Also Published As

Publication number Publication date
EP0077778A1 (de) 1983-05-04
DE3117804A1 (de) 1982-11-25
WO1982003949A1 (fr) 1982-11-11

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