JPS5873095A - ダイナミツク型メモリ装置 - Google Patents

ダイナミツク型メモリ装置

Info

Publication number
JPS5873095A
JPS5873095A JP56169887A JP16988781A JPS5873095A JP S5873095 A JPS5873095 A JP S5873095A JP 56169887 A JP56169887 A JP 56169887A JP 16988781 A JP16988781 A JP 16988781A JP S5873095 A JPS5873095 A JP S5873095A
Authority
JP
Japan
Prior art keywords
switching transistor
lines
pit
memory device
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56169887A
Other languages
English (en)
Japanese (ja)
Inventor
Shozo Saito
斎藤　昇三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56169887A priority Critical patent/JPS5873095A/ja
Priority to US06/423,145 priority patent/US4606010A/en
Priority to DE8282109152T priority patent/DE3276456D1/de
Priority to EP82109152A priority patent/EP0077935B1/de
Publication of JPS5873095A publication Critical patent/JPS5873095A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP56169887A 1981-10-23 1981-10-23 ダイナミツク型メモリ装置 Pending JPS5873095A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56169887A JPS5873095A (ja) 1981-10-23 1981-10-23 ダイナミツク型メモリ装置
US06/423,145 US4606010A (en) 1981-10-23 1982-09-24 Dynamic memory device
DE8282109152T DE3276456D1 (en) 1981-10-23 1982-10-04 Dynamic memory device
EP82109152A EP0077935B1 (de) 1981-10-23 1982-10-04 Dynamische Speicheranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56169887A JPS5873095A (ja) 1981-10-23 1981-10-23 ダイナミツク型メモリ装置

Publications (1)

Publication Number Publication Date
JPS5873095A true JPS5873095A (ja) 1983-05-02

Family

ID=15894792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56169887A Pending JPS5873095A (ja) 1981-10-23 1981-10-23 ダイナミツク型メモリ装置

Country Status (4)

Country Link
US (1) US4606010A (de)
EP (1) EP0077935B1 (de)
JP (1) JPS5873095A (de)
DE (1) DE3276456D1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62153700U (de) * 1986-03-20 1987-09-29
JPS632197A (ja) * 1986-06-20 1988-01-07 Mitsubishi Electric Corp 半導体記憶装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584672A (en) * 1984-02-22 1986-04-22 Intel Corporation CMOS dynamic random-access memory with active cycle one half power supply potential bit line precharge
EP0169460B1 (de) * 1984-07-26 1991-05-15 Texas Instruments Incorporated Dynamischer Speicheraufbau mit segmentierten und quasi-gefalteten Bitzeilen
US4908797A (en) * 1984-07-26 1990-03-13 Texas Instruments Incorporated Dynamic memory array with quasi-folded bit lines
JPS6150284A (ja) * 1984-08-17 1986-03-12 Mitsubishi Electric Corp シエアドセンスアンプ回路の駆動方法
JPS6150283A (ja) * 1984-08-17 1986-03-12 Mitsubishi Electric Corp シエアドセンスアンプの駆動回路
EP0180054A3 (de) * 1984-10-31 1988-05-11 Texas Instruments Incorporated Angepasste Struktur mit gefalzten Bitleitungsenden
EP0189699B1 (de) * 1984-12-26 1992-09-30 STMicroelectronics, Inc. Festwertspeicher mit interdigitalen Bitzeilen
JPS6280897A (ja) * 1985-10-04 1987-04-14 Mitsubishi Electric Corp 半導体記憶装置
JPS6363196A (ja) * 1986-09-02 1988-03-19 Fujitsu Ltd 半導体記憶装置
JPS63104296A (ja) * 1986-10-21 1988-05-09 Nec Corp 半導体記憶装置
JPH0787239B2 (ja) * 1986-11-18 1995-09-20 日本電気株式会社 メモリ
US5189639A (en) * 1987-11-26 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having bit lines capable of partial operation
JPH01171195A (ja) * 1987-12-25 1989-07-06 Sony Corp メモリ装置
US5022009A (en) * 1988-06-02 1991-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having reading operation of information by differential amplification
GB9007788D0 (en) * 1990-04-06 1990-06-06 Foss Richard C Dynamic memory bitline precharge scheme
US5291437A (en) * 1992-06-25 1994-03-01 Texas Instruments Incorporated Shared dummy cell
US5245578A (en) * 1992-08-12 1993-09-14 Micron Technology, Inc. DRAM with a two stage voltage pull-down sense amplifier
JPH06333386A (ja) * 1993-05-20 1994-12-02 Fujitsu Ltd 半導体記憶装置
US5381368A (en) * 1993-12-10 1995-01-10 Micron Semiconductor, Inc. Hardware implemented row copy enable mode for DRAMS to create repetitive backgrounds for video images or DRAM testing
JP4154006B2 (ja) * 1996-12-25 2008-09-24 富士通株式会社 半導体記憶装置
JP3824370B2 (ja) * 1997-03-03 2006-09-20 富士通株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045783A (en) * 1976-04-12 1977-08-30 Standard Microsystems Corporation Mos one transistor cell ram having divided and balanced bit lines, coupled by regenerative flip-flop sense amplifiers, and balanced access circuitry
DE2919166C2 (de) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Speichervorrichtung
JPS5577083A (en) * 1978-12-04 1980-06-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory unit
US4363111A (en) * 1980-10-06 1982-12-07 Heightley John D Dummy cell arrangement for an MOS memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62153700U (de) * 1986-03-20 1987-09-29
JPS632197A (ja) * 1986-06-20 1988-01-07 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0077935A2 (de) 1983-05-04
DE3276456D1 (en) 1987-07-02
US4606010A (en) 1986-08-12
EP0077935B1 (de) 1987-05-27
EP0077935A3 (en) 1985-08-07

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