JPS60263466A - Ｍｏｓ型半導体装置とその製造方法 - Google Patents

Ｍｏｓ型半導体装置とその製造方法

Info

Publication number
JPS60263466A
JPS60263466A JP59119143A JP11914384A JPS60263466A JP S60263466 A JPS60263466 A JP S60263466A JP 59119143 A JP59119143 A JP 59119143A JP 11914384 A JP11914384 A JP 11914384A JP S60263466 A JPS60263466 A JP S60263466A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
channel region
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59119143A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0552672B2 (2
Inventor
Koichi Kato
弘一 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59119143A priority Critical patent/JPS60263466A/ja
Publication of JPS60263466A publication Critical patent/JPS60263466A/ja
Publication of JPH0552672B2 publication Critical patent/JPH0552672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect

Landscapes

  • Thin Film Transistor (AREA)
JP59119143A 1984-06-12 1984-06-12 Ｍｏｓ型半導体装置とその製造方法 Granted JPS60263466A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59119143A JPS60263466A (ja) 1984-06-12 1984-06-12 Ｍｏｓ型半導体装置とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59119143A JPS60263466A (ja) 1984-06-12 1984-06-12 Ｍｏｓ型半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JPS60263466A true JPS60263466A (ja) 1985-12-26
JPH0552672B2 JPH0552672B2 (2) 1993-08-06

Family

ID=14753980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59119143A Granted JPS60263466A (ja) 1984-06-12 1984-06-12 Ｍｏｓ型半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JPS60263466A (2)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159767A (ja) * 1988-12-13 1990-06-19 Mitsubishi Electric Corp 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ
JPH04171766A (ja) * 1990-11-05 1992-06-18 Nec Corp 薄膜ｓｏｉ―ｍｏｓｆｅｔ及びその製造方法
US5982002A (en) * 1993-01-27 1999-11-09 Seiko Instruments Inc. Light valve having a semiconductor film and a fabrication process thereof
EP1143527A1 (en) * 2000-04-04 2001-10-10 Sharp Kabushiki Kaisha Semiconductor device of soi structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159767A (ja) * 1988-12-13 1990-06-19 Mitsubishi Electric Corp 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ
JPH04171766A (ja) * 1990-11-05 1992-06-18 Nec Corp 薄膜ｓｏｉ―ｍｏｓｆｅｔ及びその製造方法
US5982002A (en) * 1993-01-27 1999-11-09 Seiko Instruments Inc. Light valve having a semiconductor film and a fabrication process thereof
EP1143527A1 (en) * 2000-04-04 2001-10-10 Sharp Kabushiki Kaisha Semiconductor device of soi structure
US6693326B2 (en) 2000-04-04 2004-02-17 Sharp Kabushiki Kaisha Semiconductor device of SOI structure

Also Published As

Publication number Publication date
JPH0552672B2 (2) 1993-08-06

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term