JPS62235726A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS62235726A
JPS62235726A JP61079766A JP7976686A JPS62235726A JP S62235726 A JPS62235726 A JP S62235726A JP 61079766 A JP61079766 A JP 61079766A JP 7976686 A JP7976686 A JP 7976686A JP S62235726 A JPS62235726 A JP S62235726A
Authority
JP
Japan
Prior art keywords
film
ions
silicon
crystallinity
sos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61079766A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0533527B2 (2
Inventor
Kenji Yoneda
健司 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP61079766A priority Critical patent/JPS62235726A/ja
Publication of JPS62235726A publication Critical patent/JPS62235726A/ja
Publication of JPH0533527B2 publication Critical patent/JPH0533527B2/ja
Granted legal-status Critical Current

Links

JP61079766A 1986-04-07 1986-04-07 半導体装置の製造方法 Granted JPS62235726A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61079766A JPS62235726A (ja) 1986-04-07 1986-04-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61079766A JPS62235726A (ja) 1986-04-07 1986-04-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62235726A true JPS62235726A (ja) 1987-10-15
JPH0533527B2 JPH0533527B2 (2) 1993-05-19

Family

ID=13699333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61079766A Granted JPS62235726A (ja) 1986-04-07 1986-04-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62235726A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0752719A1 (en) * 1995-07-07 1997-01-08 Plessey Semiconductors Limited Method of manufacturing a silicon on sapphire integrated circuit arrangement
US6090648A (en) * 1993-07-12 2000-07-18 Peregrine Semiconductor Corp. Method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
JP2012506132A (ja) * 2008-10-02 2012-03-08 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 埋め込みプロセスの温度調整方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090648A (en) * 1993-07-12 2000-07-18 Peregrine Semiconductor Corp. Method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
EP0752719A1 (en) * 1995-07-07 1997-01-08 Plessey Semiconductors Limited Method of manufacturing a silicon on sapphire integrated circuit arrangement
JP2012506132A (ja) * 2008-10-02 2012-03-08 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 埋め込みプロセスの温度調整方法

Also Published As

Publication number Publication date
JPH0533527B2 (2) 1993-05-19

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