JPS62284067A - 酸化物被膜の形成方法 - Google Patents

酸化物被膜の形成方法

Info

Publication number: JPS62284067A
Authority: JP; Japan
Prior art keywords: sputtering; oxide film; film; al2o3; etching
Prior art date: 1986-06-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP12877886A

Other languages

English (en)

Japanese (ja)

Other versions

JPH041066B2 (2

Inventor

Toshiaki Wada

和田　俊朗

Yoshiaki Katsuyama

勝山　義昭

Yasuteru Kakimoto

柿本　安照

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Proterial Ltd

Original Assignee

Sumitomo Special Metals Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-06-02

Filing date

1986-06-02

Publication date

1987-12-09

1986-06-02 Application filed by Sumitomo Special Metals Co Ltd filed Critical Sumitomo Special Metals Co Ltd

1986-06-02 Priority to JP12877886A priority Critical patent/JPS62284067A/ja

1987-12-09 Publication of JPS62284067A publication Critical patent/JPS62284067A/ja

1992-01-09 Publication of JPH041066B2 publication Critical patent/JPH041066B2/ja

Status Granted legal-status Critical Current

Links

230000015572 biosynthetic process Effects 0.000 title description 2
238000004544 sputter deposition Methods 0.000 claims abstract description 28
239000000758 substrate Substances 0.000 claims abstract description 19
238000000034 method Methods 0.000 claims description 10
230000003247 decreasing effect Effects 0.000 claims description 4
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 21
229910052593 corundum Inorganic materials 0.000 abstract description 21
238000005530 etching Methods 0.000 abstract description 21
229910001845 yogo sapphire Inorganic materials 0.000 abstract description 21
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
229910052681 coesite Inorganic materials 0.000 abstract description 8
229910052906 cristobalite Inorganic materials 0.000 abstract description 8
239000000377 silicon dioxide Substances 0.000 abstract description 8
235000012239 silicon dioxide Nutrition 0.000 abstract description 8
229910052682 stishovite Inorganic materials 0.000 abstract description 8
229910052905 tridymite Inorganic materials 0.000 abstract description 8
239000010408 film Substances 0.000 description 46
238000003486 chemical etching Methods 0.000 description 5
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
239000010409 thin film Substances 0.000 description 4
239000002253 acid Substances 0.000 description 3
239000000919 ceramic Substances 0.000 description 3
238000007796 conventional method Methods 0.000 description 3
229910000147 aluminium phosphate Inorganic materials 0.000 description 2
230000007423 decrease Effects 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000010354 integration Effects 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
239000003795 chemical substances by application Substances 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000002184 metal Substances 0.000 description 1
238000000059 patterning Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
230000007261 regionalization Effects 0.000 description 1

Landscapes

Physical Vapour Deposition (AREA)

JP12877886A 1986-06-02 1986-06-02 酸化物被膜の形成方法 Granted JPS62284067A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP12877886A JPS62284067A (ja)	1986-06-02	1986-06-02	酸化物被膜の形成方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP12877886A JPS62284067A (ja)	1986-06-02	1986-06-02	酸化物被膜の形成方法

Publications (2)

Publication Number	Publication Date
JPS62284067A true JPS62284067A (ja)	1987-12-09
JPH041066B2 JPH041066B2 (2)	1992-01-09

Family

ID=14993231

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP12877886A Granted JPS62284067A (ja)	1986-06-02	1986-06-02	酸化物被膜の形成方法

Country Status (1)

Country	Link
JP (1)	JPS62284067A (2)

1986
- 1986-06-02 JP JP12877886A patent/JPS62284067A/ja active Granted

Also Published As

Publication number	Publication date
JPH041066B2 (2)	1992-01-09

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Legal Events

Date	Code	Title	Description
2004-07-01	S533	Written request for registration of change of name	Free format text: JAPANESE INTERMEDIATE CODE: R313533
2004-07-09	R350	Written notification of registration of transfer	Free format text: JAPANESE INTERMEDIATE CODE: R350
2006-06-02	EXPY	Cancellation because of completion of term