JPS6288334A - 誘電体絶縁分離基板の製造方法 - Google Patents

誘電体絶縁分離基板の製造方法

Info

Publication number: JPS6288334A
Authority: JP; Japan
Prior art keywords: voltage element; withstand voltage; element portion; single crystal; depth
Prior art date: 1985-10-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP23020285A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0574939B2 (de

Inventor

Toshiyasu Matsushima

松嶋　敏泰

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-10-15

Filing date

1985-10-15

Publication date

1987-04-22

1985-10-15 Application filed by NEC Corp filed Critical NEC Corp

1985-10-15 Priority to JP23020285A priority Critical patent/JPS6288334A/ja

1987-04-22 Publication of JPS6288334A publication Critical patent/JPS6288334A/ja

1993-10-19 Publication of JPH0574939B2 publication Critical patent/JPH0574939B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 title claims abstract description 22
238000004519 manufacturing process Methods 0.000 title claims description 11
238000009413 insulation Methods 0.000 title description 3
238000005530 etching Methods 0.000 claims abstract description 26
238000000034 method Methods 0.000 claims abstract description 14
239000004065 semiconductor Substances 0.000 claims description 6
230000000873 masking effect Effects 0.000 claims description 2
239000013078 crystal Substances 0.000 claims 4
239000010409 thin film Substances 0.000 claims 2
239000010408 film Substances 0.000 claims 1
229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 34
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
229910052710 silicon Inorganic materials 0.000 abstract description 14
239000010703 silicon Substances 0.000 abstract description 14
238000000206 photolithography Methods 0.000 abstract description 11
239000000463 material Substances 0.000 abstract description 6
230000015572 biosynthetic process Effects 0.000 abstract description 2
230000015556 catabolic process Effects 0.000 description 16
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 15
238000005516 engineering process Methods 0.000 description 6
239000012535 impurity Substances 0.000 description 5
239000000243 solution Substances 0.000 description 5
238000002955 isolation Methods 0.000 description 4
229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
235000012431 wafers Nutrition 0.000 description 3
239000007864 aqueous solution Substances 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
238000005336 cracking Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000009792 diffusion process Methods 0.000 description 1
238000000227 grinding Methods 0.000 description 1
238000005498 polishing Methods 0.000 description 1
238000007517 polishing process Methods 0.000 description 1
238000000926 separation method Methods 0.000 description 1

Landscapes

Element Separation (AREA)

JP23020285A 1985-10-15 1985-10-15 誘電体絶縁分離基板の製造方法 Granted JPS6288334A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP23020285A JPS6288334A (ja)	1985-10-15	1985-10-15	誘電体絶縁分離基板の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP23020285A JPS6288334A (ja)	1985-10-15	1985-10-15	誘電体絶縁分離基板の製造方法

Publications (2)

Publication Number	Publication Date
JPS6288334A true JPS6288334A (ja)	1987-04-22
JPH0574939B2 JPH0574939B2 (de)	1993-10-19

Family

ID=16904177

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP23020285A Granted JPS6288334A (ja)	1985-10-15	1985-10-15	誘電体絶縁分離基板の製造方法

Country Status (1)

Country	Link
JP (1)	JPS6288334A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63268253A (ja) *	1987-04-24	1988-11-04	Matsushita Electric Works Ltd	絶縁層分離基板およびその製法
US6833602B1 (en) *	2002-09-06	2004-12-21	Lattice Semiconductor Corporation	Device having electrically isolated low voltage and high voltage regions and process for fabricating the device

1985
- 1985-10-15 JP JP23020285A patent/JPS6288334A/ja active Granted

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63268253A (ja) *	1987-04-24	1988-11-04	Matsushita Electric Works Ltd	絶縁層分離基板およびその製法
US6833602B1 (en) *	2002-09-06	2004-12-21	Lattice Semiconductor Corporation	Device having electrically isolated low voltage and high voltage regions and process for fabricating the device

Also Published As

Publication number	Publication date
JPH0574939B2 (de)	1993-10-19

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