JPS6352766B2 - - Google Patents

Info

Publication number
JPS6352766B2
JPS6352766B2 JP55187259A JP18725980A JPS6352766B2 JP S6352766 B2 JPS6352766 B2 JP S6352766B2 JP 55187259 A JP55187259 A JP 55187259A JP 18725980 A JP18725980 A JP 18725980A JP S6352766 B2 JPS6352766 B2 JP S6352766B2
Authority
JP
Japan
Prior art keywords
laser beam
pattern
detected
reflected
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55187259A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57112019A (en
Inventor
Tooru Takeuchi
Nobuo Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187259A priority Critical patent/JPS57112019A/ja
Publication of JPS57112019A publication Critical patent/JPS57112019A/ja
Publication of JPS6352766B2 publication Critical patent/JPS6352766B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP55187259A 1980-12-29 1980-12-29 Detection of pattern position Granted JPS57112019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187259A JPS57112019A (en) 1980-12-29 1980-12-29 Detection of pattern position

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187259A JPS57112019A (en) 1980-12-29 1980-12-29 Detection of pattern position

Publications (2)

Publication Number Publication Date
JPS57112019A JPS57112019A (en) 1982-07-12
JPS6352766B2 true JPS6352766B2 (2) 1988-10-20

Family

ID=16202839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187259A Granted JPS57112019A (en) 1980-12-29 1980-12-29 Detection of pattern position

Country Status (1)

Country Link
JP (1) JPS57112019A (2)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608804U (ja) * 1983-06-30 1985-01-22 富士通株式会社 表面検査装置
JPH0732109B2 (ja) * 1983-10-07 1995-04-10 株式会社日立製作所 光露光方法
JPS62208630A (ja) * 1986-03-10 1987-09-12 Canon Inc 露光装置
JP2667589B2 (ja) * 1991-03-12 1997-10-27 株式会社日立製作所 光露光装置のアラインメント装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53111280A (en) * 1977-03-10 1978-09-28 Canon Inc Mask or wafer for production of semiconductor elements and device for aligning these
DE2845603C2 (de) * 1978-10-19 1982-12-09 Censor Patent- und Versuchs-Anstalt, 9490 Vaduz Verfahren und Einrichtung zum Projektionskopieren

Also Published As

Publication number Publication date
JPS57112019A (en) 1982-07-12

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