JPS642372A - Manufacture of mes fet - Google Patents

Manufacture of mes fet

Info

Publication number: JPS642372A
Authority: JP; Japan
Prior art keywords: resist; film; etched; photo; thin
Prior art date: 1987-06-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP15662187A

Other languages

English (en)

Other versions

JPH012372A (ja

Inventor

Yoshinori Yamada

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-06-25

Filing date

1987-06-25

Publication date

1989-01-06

1987-06-25 Application filed by Toshiba Corp filed Critical Toshiba Corp

1987-06-25 Priority to JP15662187A priority Critical patent/JPS642372A/ja

1989-01-06 Publication of JPH012372A publication Critical patent/JPH012372A/ja

1989-01-06 Publication of JPS642372A publication Critical patent/JPS642372A/ja

Status Pending legal-status Critical Current

Links

238000004519 manufacturing process Methods 0.000 title 1
239000010408 film Substances 0.000 abstract 6
239000010409 thin film Substances 0.000 abstract 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
239000000758 substrate Substances 0.000 abstract 2
229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
229910052581 Si3N4 Inorganic materials 0.000 abstract 1
229910052681 coesite Inorganic materials 0.000 abstract 1
229910052906 cristobalite Inorganic materials 0.000 abstract 1
238000006073 displacement reaction Methods 0.000 abstract 1
238000005530 etching Methods 0.000 abstract 1
239000002184 metal Substances 0.000 abstract 1
238000000034 method Methods 0.000 abstract 1
239000000377 silicon dioxide Substances 0.000 abstract 1
229910052682 stishovite Inorganic materials 0.000 abstract 1
229910052905 tridymite Inorganic materials 0.000 abstract 1

Landscapes

Weting (AREA)
Junction Field-Effect Transistors (AREA)

JP15662187A 1987-06-25 1987-06-25 Manufacture of mes fet Pending JPS642372A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP15662187A JPS642372A (en)	1987-06-25	1987-06-25	Manufacture of mes fet

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP15662187A JPS642372A (en)	1987-06-25	1987-06-25	Manufacture of mes fet

Publications (2)

Publication Number	Publication Date
JPH012372A JPH012372A (ja)	1989-01-06
JPS642372A true JPS642372A (en)	1989-01-06

Family

ID=15631716

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP15662187A Pending JPS642372A (en)	1987-06-25	1987-06-25	Manufacture of mes fet

Country Status (1)

Country	Link
JP (1)	JPS642372A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5338703A (en) *	1992-10-26	1994-08-16	Mitsubishi Denki Kabushiki Kaisha	Method for producing a recessed gate field effect transistor

1987
- 1987-06-25 JP JP15662187A patent/JPS642372A/ja active Pending

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5338703A (en) *	1992-10-26	1994-08-16	Mitsubishi Denki Kabushiki Kaisha	Method for producing a recessed gate field effect transistor

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