JPS64268A - Valve for vapor growth - Google Patents

Valve for vapor growth

Info

Publication number
JPS64268A
JPS64268A JP15613387A JP15613387A JPS64268A JP S64268 A JPS64268 A JP S64268A JP 15613387 A JP15613387 A JP 15613387A JP 15613387 A JP15613387 A JP 15613387A JP S64268 A JPS64268 A JP S64268A
Authority
JP
Japan
Prior art keywords
gas
raw gas
inlet
cylinders
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15613387A
Other languages
English (en)
Other versions
JPH0471993B2 (ja
JPH01268A (ja
Inventor
Minoru Aragaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP15613387A priority Critical patent/JPS64268A/ja
Publication of JPH01268A publication Critical patent/JPH01268A/ja
Publication of JPS64268A publication Critical patent/JPS64268A/ja
Publication of JPH0471993B2 publication Critical patent/JPH0471993B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP15613387A 1987-06-23 1987-06-23 Valve for vapor growth Granted JPS64268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15613387A JPS64268A (en) 1987-06-23 1987-06-23 Valve for vapor growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15613387A JPS64268A (en) 1987-06-23 1987-06-23 Valve for vapor growth

Publications (3)

Publication Number Publication Date
JPH01268A JPH01268A (ja) 1989-01-05
JPS64268A true JPS64268A (en) 1989-01-05
JPH0471993B2 JPH0471993B2 (ja) 1992-11-17

Family

ID=15621044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15613387A Granted JPS64268A (en) 1987-06-23 1987-06-23 Valve for vapor growth

Country Status (1)

Country Link
JP (1) JPS64268A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051205A (ja) * 2003-06-11 2005-02-24 Asm Internatl Nv ガス供給システム、弁アセンブリ、および弁アセンブリを操作することによる反応物質パルス形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051205A (ja) * 2003-06-11 2005-02-24 Asm Internatl Nv ガス供給システム、弁アセンブリ、および弁アセンブリを操作することによる反応物質パルス形成方法

Also Published As

Publication number Publication date
JPH0471993B2 (ja) 1992-11-17

Similar Documents

Publication Publication Date Title
US5160542A (en) Apparatus for vaporizing and supplying organometal compounds
ES478972A1 (es) Perfeccionamientos en los reactores para el tratamiento ter-mico continuo de materias solidas.
FR2514341A1 (fr) Procede pour calciner de la pierre a chaux, dolomite ou materiaux analogues, et four a cuve annulaire pour sa mise en oeuvre
JPS64268A (en) Valve for vapor growth
JPS5694751A (en) Vapor growth method
JPH0230119A (ja) 気相成長装置
JPS6457712A (en) Vapor growth device
JPS6483661A (en) Vapor growth device by method for thermally decomposing organic metal
JPS56161832A (en) Gaseous phase treatment device
JPS5518024A (en) Vapor phase reactor
JPS6449218A (en) Manufacture of semiconductor
JPS5484900A (en) Vapor phase growth method of magnesia spinel
JPS55104542A (en) Excess-air-ratio controlling system for engine using alcohol-modified gas as fuel
JPS5583228A (en) Gas phase growing of 3, 5 group compound mixed crystal semiconductor
JPS6446917A (en) Chemical vapor growth device
JPS55167199A (en) Vapor phase epitaxial growing apparatus
JPS57145314A (en) Vapor growth apparatus for 3-5 group compound semiconductor
JPS6459808A (en) Growth of semiconductor
JPS5511319A (en) Method of gaseous-phase growing for semiconductor layer
JPH02177319A (ja) 気相成長装置
JPS5484973A (en) Vapour-phase growth method of compound semiconductor
JPS5520282A (en) Vapor phase growing method for crystal
JPH02132821A (ja) 半導体薄膜製造装置
KR920018238A (ko) 화학증착법에 의한 Y1Ba2Cu3O7-y고온초전도체박막과 그 제조방법 및 장치
JPS55162221A (en) Apparatus for vapor growth

Legal Events

Date Code Title Description
S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313532

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 15

Free format text: PAYMENT UNTIL: 20071117