JPS6473658A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6473658A
JPS6473658A JP62231610A JP23161087A JPS6473658A JP S6473658 A JPS6473658 A JP S6473658A JP 62231610 A JP62231610 A JP 62231610A JP 23161087 A JP23161087 A JP 23161087A JP S6473658 A JPS6473658 A JP S6473658A
Authority
JP
Japan
Prior art keywords
metal layer
insulating
coil
insulating layer
magnetic substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62231610A
Other languages
Japanese (ja)
Inventor
Hidetaka Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62231610A priority Critical patent/JPS6473658A/en
Publication of JPS6473658A publication Critical patent/JPS6473658A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make high integration easy by a method wherein end parts of each strip of a first metal layer and end parts of each strip of a second metal layer are connected individually via through holes made in a second insulating layer and a third insulating layer in such a way that the first metal layer and the second metal layer form a coil and that a magnetic substance is situated at the inside of the coil. CONSTITUTION:A silicon nitride film as a first insulating layer 6 is formed on the surface; two or more parallel strip of a first metal layer 8 are formed on it. A silicon nitride film as a second insulating film 7 is formed on the first metal layer 8 and the first insulating layer 6; a ferrite as a magnetic substance 12 is formed on the second insulating film 7 and is patterned to be a belt shape. Then, a silicon nitride film as a third insulating layer 9 is formed on the strip-shaped magnetic substance 12 and the second insulating layer 7; a through hole 70 is made in the second and the third insulating layers 7, 9 in a position that the first metal layer 8 and a second metal layer 11 form a coil and that the magnetic substance 72 is situated at the inside of the coil; two or more strips of the second metal layer 11 which are arranged by forming a small angle with reference to the first metal layer 8 at intervals are formed on the third insulating layer. By this setup, a square-shaped coil which has the magnetic substance at the inside can be formed.
JP62231610A 1987-09-14 1987-09-14 Semiconductor device Pending JPS6473658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62231610A JPS6473658A (en) 1987-09-14 1987-09-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62231610A JPS6473658A (en) 1987-09-14 1987-09-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6473658A true JPS6473658A (en) 1989-03-17

Family

ID=16926210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62231610A Pending JPS6473658A (en) 1987-09-14 1987-09-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6473658A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019220862A1 (en) * 2018-05-18 2019-11-21 株式会社村田製作所 Inductor and method for producing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136363A (en) * 1983-12-26 1985-07-19 Toshiba Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136363A (en) * 1983-12-26 1985-07-19 Toshiba Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019220862A1 (en) * 2018-05-18 2019-11-21 株式会社村田製作所 Inductor and method for producing same

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