JPS64747A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS64747A JPS64747A JP62155825A JP15582587A JPS64747A JP S64747 A JPS64747 A JP S64747A JP 62155825 A JP62155825 A JP 62155825A JP 15582587 A JP15582587 A JP 15582587A JP S64747 A JPS64747 A JP S64747A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- contact hole
- resist
- aluminum
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62155825A JPS64747A (en) | 1987-06-23 | 1987-06-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62155825A JPS64747A (en) | 1987-06-23 | 1987-06-23 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01747A JPH01747A (ja) | 1989-01-05 |
| JPS64747A true JPS64747A (en) | 1989-01-05 |
Family
ID=15614313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62155825A Pending JPS64747A (en) | 1987-06-23 | 1987-06-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS64747A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08167657A (ja) * | 1994-12-14 | 1996-06-25 | Nec Corp | 半導体装置の製造方法 |
| JP2007530883A (ja) * | 2004-03-26 | 2007-11-01 | ザ ビーオーシー グループ ピーエルシー | ギアアセンブリー |
-
1987
- 1987-06-23 JP JP62155825A patent/JPS64747A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08167657A (ja) * | 1994-12-14 | 1996-06-25 | Nec Corp | 半導体装置の製造方法 |
| JP2007530883A (ja) * | 2004-03-26 | 2007-11-01 | ザ ビーオーシー グループ ピーエルシー | ギアアセンブリー |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5425178A (en) | Manufacture for semiconductor device | |
| JPS64747A (en) | Manufacture of semiconductor device | |
| JPS5661170A (en) | Preparation of field effect transistor | |
| JPS5559741A (en) | Preparation of semiconductor device | |
| JPS5240968A (en) | Process for production of semiconductor device | |
| JPS5745957A (en) | Circuit substrate and manufacture thereof | |
| JPS5380183A (en) | Semiconductor device | |
| JPS5274883A (en) | High density connector | |
| JPS5376752A (en) | Production of semionductor device | |
| JPS5335472A (en) | Production of semiconductor unit | |
| JPS56167331A (en) | Manufacture of semiconductor device | |
| JPS5732655A (en) | Semiconductor integrated circuit device | |
| JPS5227362A (en) | Formation method of passivation film | |
| JPS6437012A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5272186A (en) | Production of mis type semiconductor device | |
| JPS53110391A (en) | Manufacture of multi-layer wiring for semiconductor device | |
| JPS558035A (en) | Semiconductor | |
| JPS57184232A (en) | Manufacture of semiconductor device | |
| JPS546775A (en) | Semiconductor device featuring stepped electrode structure | |
| JPS57126149A (en) | Manufacture of semiconductor device | |
| JPS57180138A (en) | Semiconductor device | |
| JPS5513981A (en) | Semiconductor device | |
| JPS556890A (en) | Manufacturing method of semiconductor device | |
| JPS6437037A (en) | Manufacture of semiconductor device | |
| JPS5599768A (en) | Semicondcutor device |