JPS649625B2 - - Google Patents
Info
- Publication number
- JPS649625B2 JPS649625B2 JP55134115A JP13411580A JPS649625B2 JP S649625 B2 JPS649625 B2 JP S649625B2 JP 55134115 A JP55134115 A JP 55134115A JP 13411580 A JP13411580 A JP 13411580A JP S649625 B2 JPS649625 B2 JP S649625B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoconductive
- atoms
- gas
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55134115A JPS5758160A (en) | 1980-09-25 | 1980-09-25 | Photoconductive member |
| US06/304,568 US4394426A (en) | 1980-09-25 | 1981-09-22 | Photoconductive member with α-Si(N) barrier layer |
| GB8128841A GB2087643B (en) | 1980-09-25 | 1981-09-24 | Photoconductive member |
| AU75648/81A AU554181B2 (en) | 1980-09-25 | 1981-09-24 | Photoconductive device |
| NL8104426A NL192142C (nl) | 1980-09-25 | 1981-09-25 | Fotogeleidend orgaan. |
| CA000386703A CA1181628A (en) | 1980-09-25 | 1981-09-25 | Photoconductive member including non-photoconductive layer containing amorphous silicon matrix containing nitrogen |
| DE813152399A DE3152399A1 (en) | 1980-09-25 | 1981-09-25 | Photoconductive member |
| PCT/JP1981/000256 WO1982001261A1 (en) | 1980-09-25 | 1981-09-25 | Photoconductive member |
| FR8118123A FR2490839B1 (fr) | 1980-09-25 | 1981-09-25 | Element photoconducteur |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55134115A JPS5758160A (en) | 1980-09-25 | 1980-09-25 | Photoconductive member |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57077667A Division JPS5811949A (ja) | 1982-05-10 | 1982-05-10 | 光導電部材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5758160A JPS5758160A (en) | 1982-04-07 |
| JPS649625B2 true JPS649625B2 (cs) | 1989-02-17 |
Family
ID=15120802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55134115A Granted JPS5758160A (en) | 1980-09-25 | 1980-09-25 | Photoconductive member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5758160A (cs) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5824148A (ja) * | 1981-08-06 | 1983-02-14 | Seiko Epson Corp | 電子写真感光体 |
| JPS5995541A (ja) * | 1982-11-25 | 1984-06-01 | Tomoegawa Paper Co Ltd | 電子写真感光体およびその製造方法 |
| US4675263A (en) | 1984-03-12 | 1987-06-23 | Canon Kabushiki Kaisha | Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate |
| JPS60256151A (ja) * | 1984-05-31 | 1985-12-17 | Fujitsu Ltd | 電子写真感光体 |
| US4678733A (en) | 1984-10-15 | 1987-07-07 | Canon Kabushiki Kaisha | Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces |
| JPS6289064A (ja) | 1985-10-16 | 1987-04-23 | Canon Inc | 光受容部材 |
| JPS6290663A (ja) | 1985-10-17 | 1987-04-25 | Canon Inc | 光受容部材 |
| JPS62106468A (ja) | 1985-11-01 | 1987-05-16 | Canon Inc | 光受容部材 |
| JPS62106470A (ja) | 1985-11-02 | 1987-05-16 | Canon Inc | 光受容部材 |
| JPH0769622B2 (ja) * | 1988-03-08 | 1995-07-31 | 富士通株式会社 | 光背面記録用感光体及び画像形成装置 |
-
1980
- 1980-09-25 JP JP55134115A patent/JPS5758160A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5758160A (en) | 1982-04-07 |
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