PL207400B1 - Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal - Google Patents
Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego galInfo
- Publication number
- PL207400B1 PL207400B1 PL347918A PL34791801A PL207400B1 PL 207400 B1 PL207400 B1 PL 207400B1 PL 347918 A PL347918 A PL 347918A PL 34791801 A PL34791801 A PL 34791801A PL 207400 B1 PL207400 B1 PL 207400B1
- Authority
- PL
- Poland
- Prior art keywords
- gallium
- autoclave
- zone
- temperature
- nitride
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 78
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims description 45
- 229910052733 gallium Inorganic materials 0.000 title claims description 45
- 238000002425 crystallisation Methods 0.000 claims abstract description 39
- 230000008025 crystallization Effects 0.000 claims abstract description 39
- 239000002904 solvent Substances 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 229910001413 alkali metal ion Inorganic materials 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 44
- 238000004090 dissolution Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 29
- 229910021529 ammonia Inorganic materials 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 14
- 230000007547 defect Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 6
- 210000001161 mammalian embryo Anatomy 0.000 claims description 6
- -1 amide-imides Chemical class 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 150000001540 azides Chemical class 0.000 claims description 2
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 150000003949 imides Chemical class 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910001414 potassium ion Inorganic materials 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 5
- 229910002601 GaN Inorganic materials 0.000 description 47
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 32
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 12
- 229910021055 KNH2 Inorganic materials 0.000 description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052700 potassium Inorganic materials 0.000 description 7
- 239000011591 potassium Substances 0.000 description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- 238000005303 weighing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910013698 LiNH2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 210000002257 embryonic structure Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- 229910021482 group 13 metal Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- AFRJJFRNGGLMDW-UHFFFAOYSA-N lithium amide Chemical compound [Li+].[NH2-] AFRJJFRNGGLMDW-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- FEMRXDWBWXQOGV-UHFFFAOYSA-N potassium amide Chemical class [NH2-].[K+] FEMRXDWBWXQOGV-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Golf Clubs (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Priority Applications (48)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL347918A PL207400B1 (pl) | 2001-06-06 | 2001-06-06 | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
| IL15916502A IL159165A0 (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk monocrystalline gallium containing nitride |
| AU2002328130A AU2002328130B2 (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| CZ2003-3564A CZ306997B6 (cs) | 2001-06-06 | 2002-05-17 | Způsob a zařízení pro přípravu objemného nitridového monokrystalu obsahujícího gallium |
| RU2004100115/15A RU2296189C2 (ru) | 2001-06-06 | 2002-05-17 | Способ и устройство для получения объемного монокристаллического галлийсодержащего нитрида (варианты) |
| US10/479,807 US7252712B2 (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| TW091110622A TWI277666B (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride |
| JP2002143449A JP2003040699A (ja) | 2001-06-06 | 2002-05-17 | ガリウム含有窒化物のバルク単結晶の製造法 |
| US10/147,318 US6656615B2 (en) | 2001-06-06 | 2002-05-17 | Bulk monocrystalline gallium nitride |
| MYPI20021812A MY141883A (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride |
| PCT/IB2002/004185 WO2002101120A2 (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| CNB028020235A CN100453710C (zh) | 2001-06-06 | 2002-05-17 | 获得整体单晶性含镓氮化物的方法及装置 |
| PL370418A PL219109B1 (pl) | 2001-06-06 | 2002-05-17 | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| JP2003503864A JP4116535B2 (ja) | 2001-06-06 | 2002-05-17 | ガリウム含有窒化物の単結晶の製造法及び装置 |
| UA20031212656A UA78705C2 (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining of bulky nitride monocrystal, containing gallium |
| KR1020037001726A KR100850293B1 (ko) | 2001-06-06 | 2002-05-17 | 벌크 단결정 갈륨함유 질화물을 얻기 위한 방법 및 장치 |
| EP06024719.4A EP1770189B1 (de) | 2001-06-06 | 2002-05-17 | Vorrichtung zur Herstellung massiven Einkristallen aus Gallium enthaltendem Nitrid |
| US10/147,319 US7160388B2 (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| HU0401866A HUP0401866A3 (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| CA2449714A CA2449714C (en) | 2001-06-06 | 2002-05-17 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| EP02762734.8A EP1432853B1 (de) | 2001-06-06 | 2002-05-17 | Verfahren zur herstellung massiven einkristallen aus gallium enthaltendem nitrid |
| CNB028019512A CN1260409C (zh) | 2001-06-06 | 2002-06-06 | 氮化镓的块状单结晶的制造方法 |
| TW091112459A TW588016B (en) | 2001-06-06 | 2002-06-06 | Process for obtaining bulk mono-crystalline gallium nitride |
| TW091112457A TW569471B (en) | 2001-06-06 | 2002-06-06 | Process for forming bulk mono-crystalline gallium-containing nitride on heterogeneous substrate |
| DE60230513T DE60230513D1 (de) | 2001-06-06 | 2002-06-06 | Verfahren zur herstellung von aluminiumnitrid-volumeneinkristallen |
| US10/479,858 US7374615B2 (en) | 2001-06-06 | 2002-06-06 | Method and equipment for manufacturing aluminum nitride bulk single crystal |
| AT02733363T ATE418630T1 (de) | 2001-06-06 | 2002-06-06 | Verfahren zur herstellung von aluminiumnitrid- volumeneinkristallen |
| TW091112458A TW546272B (en) | 2001-06-06 | 2002-06-06 | Process for obtaining bulk mono-crystalline aluminum nitride |
| PCT/JP2002/005625 WO2002101125A1 (en) | 2001-06-06 | 2002-06-06 | Method of manufacturing bulk single crystal of gallium nitride |
| CNB028019520A CN1300388C (zh) | 2001-06-06 | 2002-06-06 | 含镓氮化物块状单结晶在异质基板上的形成法 |
| KR1020037001728A KR100853842B1 (ko) | 2001-06-06 | 2002-06-06 | 질화 갈륨의 벌크 단결정의 제조법 |
| JP2003503868A JP4113837B2 (ja) | 2001-06-06 | 2002-06-06 | ガリウム含有窒化物単結晶の異種基板上の成長方法 |
| US10/479,857 US7422633B2 (en) | 2001-06-06 | 2002-06-06 | Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate |
| PCT/JP2002/005624 WO2002101124A1 (en) | 2001-06-06 | 2002-06-06 | Method and equipment for manufacturing aluminum nitride bulk single crystal |
| KR1020037001729A KR100865348B1 (ko) | 2001-06-06 | 2002-06-06 | 갈륨함유 질화물 단결정의 이종기판상의 형성법 |
| US10/479,856 US7081162B2 (en) | 2001-06-06 | 2002-06-06 | Method of manufacturing bulk single crystal of gallium nitride |
| EP02733363A EP1405936B1 (de) | 2001-06-06 | 2002-06-06 | Verfahren zur herstellung von aluminiumnitrid-volumeneinkristallen |
| PCT/JP2002/005626 WO2002101126A1 (fr) | 2001-06-06 | 2002-06-06 | Procede de formation d'un monocristal non epitaxie de nitrure contenant du gallium sur un substrat heterogene |
| CNB028019504A CN1282771C (zh) | 2001-06-06 | 2002-06-06 | 氮化铝块状单晶的制造方法 |
| JP2003503867A JP4113836B2 (ja) | 2001-06-06 | 2002-06-06 | 窒化ガリウムのバルク単結晶の製造法 |
| JP2003503866A JP4113835B2 (ja) | 2001-06-06 | 2002-06-06 | 窒化アルミニウムバルク単結晶の製造法 |
| KR1020037001727A KR100853841B1 (ko) | 2001-06-06 | 2002-06-06 | 질화 알루미늄 벌크 단결정의 제조법 및 생산설비 |
| JP2004506101A JPWO2003098708A1 (ja) | 2001-06-06 | 2002-12-13 | 蛍光体単結晶基板、及びその製法並びにそれを用いる窒化物半導体素子 |
| US10/682,891 US7744697B2 (en) | 2001-06-06 | 2003-10-14 | Bulk monocrystalline gallium nitride |
| IL159165A IL159165A (en) | 2001-06-06 | 2003-12-03 | Process and device for obtaining a volume of monocrystalline gallium containing nitride |
| NO20035437A NO20035437D0 (no) | 2001-06-06 | 2003-12-05 | Fremgangsmåte og apparatur til fremstilling av bulk- monokrystallinsk galliumholdig nitrid |
| JP2004033462A JP4358646B2 (ja) | 2001-06-06 | 2004-02-10 | ガリウム含有窒化物のバルク単結晶 |
| JP2008059744A JP4726923B2 (ja) | 2001-06-06 | 2008-03-10 | ガリウム含有窒化物の単結晶の製造法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL347918A PL207400B1 (pl) | 2001-06-06 | 2001-06-06 | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL347918A1 PL347918A1 (en) | 2002-12-16 |
| PL207400B1 true PL207400B1 (pl) | 2010-12-31 |
Family
ID=20078910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL347918A PL207400B1 (pl) | 2001-06-06 | 2001-06-06 | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US7081162B2 (de) |
| EP (1) | EP1405936B1 (de) |
| JP (2) | JP4113835B2 (de) |
| KR (2) | KR100853841B1 (de) |
| CN (2) | CN1260409C (de) |
| AT (1) | ATE418630T1 (de) |
| DE (1) | DE60230513D1 (de) |
| PL (1) | PL207400B1 (de) |
| UA (1) | UA78705C2 (de) |
| WO (2) | WO2002101124A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10145021B2 (en) | 2010-07-28 | 2018-12-04 | Slt Technologies, Inc. | Apparatus for processing materials at high temperatures and pressures |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL159165A0 (en) * | 2001-06-06 | 2004-06-01 | Ammono Sp Zoo | Process and apparatus for obtaining bulk monocrystalline gallium containing nitride |
| PL207400B1 (pl) | 2001-06-06 | 2010-12-31 | Ammono Społka Z Ograniczoną Odpowiedzialnością | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
| EP1453158A4 (de) * | 2001-10-26 | 2007-09-19 | Ammono Sp Zoo | Nitridhalbleiterlaserelement und herstellungsverfahren dafür |
| PL225235B1 (pl) * | 2001-10-26 | 2017-03-31 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Objętościowy monokryształ azotkowy oraz jego zastosowanie jako podłoże do epitaksji |
| US20060138431A1 (en) | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
| WO2003097906A1 (en) * | 2002-05-17 | 2003-11-27 | Ammono Sp.Zo.O. | Bulk single crystal production facility employing supercritical ammonia |
| AU2002354467A1 (en) | 2002-05-17 | 2003-12-02 | Ammono Sp.Zo.O. | Light emitting element structure having nitride bulk single crystal layer |
| CN100339512C (zh) | 2002-06-26 | 2007-09-26 | 波兰商艾蒙诺公司 | 获得大单晶含镓氮化物的方法的改进 |
| AU2003285769A1 (en) * | 2002-12-11 | 2004-06-30 | Ammono Sp. Z O.O. | A substrate for epitaxy and a method of preparing the same |
| US7811380B2 (en) | 2002-12-11 | 2010-10-12 | Ammono Sp. Z O.O. | Process for obtaining bulk mono-crystalline gallium-containing nitride |
| US9279193B2 (en) | 2002-12-27 | 2016-03-08 | Momentive Performance Materials Inc. | Method of making a gallium nitride crystalline composition having a low dislocation density |
| JP5159023B2 (ja) * | 2002-12-27 | 2013-03-06 | モーメンティブ・パフォーマンス・マテリアルズ・インク | 窒化ガリウム結晶、ホモエピタキシャル窒化ガリウムを基材とするデバイス、及びその製造方法 |
| US7261775B2 (en) | 2003-01-29 | 2007-08-28 | Ricoh Company, Ltd. | Methods of growing a group III nitride crystal |
| JP4511801B2 (ja) * | 2003-03-14 | 2010-07-28 | 株式会社リコー | Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス |
| WO2005080648A1 (ja) * | 2004-02-19 | 2005-09-01 | Matsushita Electric Industrial Co., Ltd. | 化合物単結晶の製造方法、およびそれに用いる製造装置 |
| US7794539B2 (en) * | 2004-03-31 | 2010-09-14 | Panasonic Corporation | Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby |
| JP2005298269A (ja) * | 2004-04-12 | 2005-10-27 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス |
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Also Published As
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| US20050087124A1 (en) | 2005-04-28 |
| KR100853841B1 (ko) | 2008-08-22 |
| CN1282771C (zh) | 2006-11-01 |
| JP4113835B2 (ja) | 2008-07-09 |
| US7374615B2 (en) | 2008-05-20 |
| KR20030036673A (ko) | 2003-05-09 |
| KR20030036674A (ko) | 2003-05-09 |
| US7081162B2 (en) | 2006-07-25 |
| CN1463307A (zh) | 2003-12-24 |
| WO2002101125A1 (en) | 2002-12-19 |
| DE60230513D1 (de) | 2009-02-05 |
| JPWO2002101124A1 (ja) | 2004-09-24 |
| US20040244680A1 (en) | 2004-12-09 |
| WO2002101124A1 (en) | 2002-12-19 |
| JPWO2002101125A1 (ja) | 2004-09-24 |
| EP1405936A4 (de) | 2007-08-15 |
| EP1405936B1 (de) | 2008-12-24 |
| CN1463308A (zh) | 2003-12-24 |
| ATE418630T1 (de) | 2009-01-15 |
| EP1405936A1 (de) | 2004-04-07 |
| JP4113836B2 (ja) | 2008-07-09 |
| PL347918A1 (en) | 2002-12-16 |
| CN1260409C (zh) | 2006-06-21 |
| UA78705C2 (en) | 2007-04-25 |
| KR100853842B1 (ko) | 2008-08-22 |
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