TW237555B - - Google Patents
Info
- Publication number
- TW237555B TW237555B TW080110030A TW80110030A TW237555B TW 237555 B TW237555 B TW 237555B TW 080110030 A TW080110030 A TW 080110030A TW 80110030 A TW80110030 A TW 80110030A TW 237555 B TW237555 B TW 237555B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910007010A KR940005446B1 (ko) | 1991-04-30 | 1991-04-30 | 반도체 장치의 금속전극 형성방법 |
| KR1019910007009A KR940008565B1 (ko) | 1991-04-30 | 1991-04-30 | 반도체 장치의 금속전극 형성방법 |
| KR1019910011375A KR930003254A (ko) | 1991-07-05 | 1991-07-05 | 반도체 장치의 금속배선 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW237555B true TW237555B (2) | 1995-01-01 |
Family
ID=27348735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW080110030A TW237555B (2) | 1991-04-30 | 1991-12-23 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US5240868A (2) |
| JP (1) | JPH0793420B2 (2) |
| DE (1) | DE4143116C2 (2) |
| FR (1) | FR2676143B1 (2) |
| GB (1) | GB2255443B (2) |
| TW (1) | TW237555B (2) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960001611B1 (ko) | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
| US5468987A (en) * | 1991-03-06 | 1995-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| JP2873632B2 (ja) | 1991-03-15 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
| US5485019A (en) * | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6624450B1 (en) * | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| TW223178B (en) * | 1992-03-27 | 1994-05-01 | Semiconductor Energy Res Co Ltd | Semiconductor device and its production method |
| TW232751B (en) * | 1992-10-09 | 1994-10-21 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for forming the same |
| US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR970004885B1 (ko) * | 1993-05-12 | 1997-04-08 | 삼성전자 주식회사 | 평판표시장치 및 그 제조방법 |
| JPH0730125A (ja) | 1993-07-07 | 1995-01-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2951215B2 (ja) * | 1993-09-10 | 1999-09-20 | レイセオン・カンパニー | 位相マスクレーザによる微細なパターンの電子相互接続構造の製造方法 |
| US5731216A (en) * | 1996-03-27 | 1998-03-24 | Image Quest Technologies, Inc. | Method of making an active matrix display incorporating an improved TFT |
| US5888371A (en) * | 1996-04-10 | 1999-03-30 | The Board Of Trustees Of The Leland Stanford Jr. University | Method of fabricating an aperture for a near field scanning optical microscope |
| JPH10163501A (ja) * | 1996-11-29 | 1998-06-19 | Semiconductor Energy Lab Co Ltd | 絶縁ゲイト型トランジスタ |
| KR100229678B1 (ko) * | 1996-12-06 | 1999-11-15 | 구자홍 | 박막트랜지스터 및 그의 제조방법 |
| US20020008257A1 (en) * | 1998-09-30 | 2002-01-24 | John P. Barnak | Mosfet gate electrodes having performance tuned work functions and methods of making same |
| DE10014985A1 (de) * | 2000-03-25 | 2001-10-04 | Bosch Gmbh Robert | Herstellungsverfahren für ein Dünnschicht-Bauelement, insbesondere ein Dünnschicht-Hochdrucksensorelement |
| JP4581198B2 (ja) * | 2000-08-10 | 2010-11-17 | ソニー株式会社 | 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法 |
| US7347924B1 (en) * | 2002-12-24 | 2008-03-25 | Ij Research, Inc. | Anodizing of optically transmissive substrate |
| US20060183342A1 (en) * | 2005-02-15 | 2006-08-17 | Eastman Kodak Company | Metal and metal oxide patterned device |
| US7963832B2 (en) * | 2006-02-22 | 2011-06-21 | Cummins Inc. | Engine intake air temperature management system |
| US7655127B2 (en) * | 2006-11-27 | 2010-02-02 | 3M Innovative Properties Company | Method of fabricating thin film transistor |
| US20080121877A1 (en) * | 2006-11-27 | 2008-05-29 | 3M Innovative Properties Company | Thin film transistor with enhanced stability |
| KR101076191B1 (ko) * | 2008-12-05 | 2011-10-21 | 현대자동차주식회사 | 피티씨 로드 조립체 및 이를 이용한 피티씨 히터 |
| WO2010074913A2 (en) * | 2008-12-23 | 2010-07-01 | 3M Innovative Properties Company | Electrical connections for anodized thin film structures |
| JP2011025548A (ja) * | 2009-07-27 | 2011-02-10 | Kyocera Corp | 配線基板およびその製造方法、ならびに記録ヘッドおよび記録装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3862017A (en) * | 1970-02-04 | 1975-01-21 | Hideo Tsunemitsu | Method for producing a thin film passive circuit element |
| US3671819A (en) * | 1971-01-26 | 1972-06-20 | Westinghouse Electric Corp | Metal-insulator structures and method for forming |
| US3909319A (en) * | 1971-02-23 | 1975-09-30 | Shohei Fujiwara | Planar structure semiconductor device and method of making the same |
| JPS557020B2 (2) * | 1971-11-15 | 1980-02-21 | ||
| US3939047A (en) * | 1971-11-15 | 1976-02-17 | Nippon Electric Co., Ltd. | Method for fabricating electrode structure for a semiconductor device having a shallow junction |
| US3864217A (en) * | 1974-01-21 | 1975-02-04 | Nippon Electric Co | Method of fabricating a semiconductor device |
| US4005452A (en) * | 1974-11-15 | 1977-01-25 | International Telephone And Telegraph Corporation | Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby |
| US3971710A (en) * | 1974-11-29 | 1976-07-27 | Ibm | Anodized articles and process of preparing same |
| DE2539193C3 (de) * | 1975-09-03 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen |
| JPS5271980A (en) * | 1975-12-11 | 1977-06-15 | Nec Corp | Formation of metal wiring |
| JPS53107284A (en) * | 1977-03-02 | 1978-09-19 | Hitachi Ltd | Production of semiconductor device |
| US4158613A (en) * | 1978-12-04 | 1979-06-19 | Burroughs Corporation | Method of forming a metal interconnect structure for integrated circuits |
| US4261096A (en) * | 1979-03-30 | 1981-04-14 | Harris Corporation | Process for forming metallic ground grid for integrated circuits |
| JPS58100461A (ja) * | 1981-12-10 | 1983-06-15 | Japan Electronic Ind Dev Assoc<Jeida> | 薄膜トランジスタの製造方法 |
| US4432134A (en) * | 1982-05-10 | 1984-02-21 | Rockwell International Corporation | Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices |
| GB2140203B (en) * | 1983-03-15 | 1987-01-14 | Canon Kk | Thin film transistor with wiring layer continuous with the source and drain |
| US4681666A (en) * | 1986-11-13 | 1987-07-21 | Microelectronics And Computer Technology Corporation | Planarization of a layer of metal and anodic aluminum |
| JPH061314B2 (ja) * | 1987-07-30 | 1994-01-05 | シャープ株式会社 | 薄膜トランジスタアレイ |
| JPH01219721A (ja) * | 1988-02-19 | 1989-09-01 | Internatl Business Mach Corp <Ibm> | 金属絶縁物構造体及び液晶表示装置 |
-
1991
- 1991-12-20 GB GB9127095A patent/GB2255443B/en not_active Expired - Fee Related
- 1991-12-20 US US07/810,848 patent/US5240868A/en not_active Expired - Fee Related
- 1991-12-23 TW TW080110030A patent/TW237555B/zh active
- 1991-12-23 DE DE4143116A patent/DE4143116C2/de not_active Expired - Fee Related
- 1991-12-27 FR FR9116244A patent/FR2676143B1/fr not_active Expired - Fee Related
-
1992
- 1992-01-28 JP JP4035801A patent/JPH0793420B2/ja not_active Expired - Lifetime
-
1993
- 1993-05-21 US US08/065,562 patent/US5306668A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5240868A (en) | 1993-08-31 |
| JPH0793420B2 (ja) | 1995-10-09 |
| DE4143116C2 (de) | 1996-07-18 |
| FR2676143A1 (fr) | 1992-11-06 |
| FR2676143B1 (fr) | 1994-05-20 |
| GB2255443A (en) | 1992-11-04 |
| DE4143116A1 (de) | 1992-11-05 |
| GB9127095D0 (en) | 1992-02-19 |
| JPH04338677A (ja) | 1992-11-25 |
| GB2255443B (en) | 1995-09-13 |
| US5306668A (en) | 1994-04-26 |