ATE108912T1 - Verfahren zur herstellung von rückwänden für flachbildschirme. - Google Patents

Verfahren zur herstellung von rückwänden für flachbildschirme.

Info

Publication number
ATE108912T1
ATE108912T1 AT90202697T AT90202697T ATE108912T1 AT E108912 T1 ATE108912 T1 AT E108912T1 AT 90202697 T AT90202697 T AT 90202697T AT 90202697 T AT90202697 T AT 90202697T AT E108912 T1 ATE108912 T1 AT E108912T1
Authority
AT
Austria
Prior art keywords
gate
transistors
patterned
back panels
ito
Prior art date
Application number
AT90202697T
Other languages
English (en)
Inventor
Scott H Holmberg
Richard A Flasck
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of ATE108912T1 publication Critical patent/ATE108912T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Residential Or Office Buildings (AREA)
AT90202697T 1983-05-11 1984-05-11 Verfahren zur herstellung von rückwänden für flachbildschirme. ATE108912T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/493,523 US4736229A (en) 1983-05-11 1983-05-11 Method of manufacturing flat panel backplanes, display transistors and displays made thereby

Publications (1)

Publication Number Publication Date
ATE108912T1 true ATE108912T1 (de) 1994-08-15

Family

ID=23960590

Family Applications (2)

Application Number Title Priority Date Filing Date
AT90202697T ATE108912T1 (de) 1983-05-11 1984-05-11 Verfahren zur herstellung von rückwänden für flachbildschirme.
AT84105383T ATE66095T1 (de) 1983-05-11 1984-05-11 Verfahren zur herstellung von rueckseitenplatten fuer flache anzeigen von anzeigetransistoren, sowie nach diesem verfahren hergestellte anzeigen.

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT84105383T ATE66095T1 (de) 1983-05-11 1984-05-11 Verfahren zur herstellung von rueckseitenplatten fuer flache anzeigen von anzeigetransistoren, sowie nach diesem verfahren hergestellte anzeigen.

Country Status (4)

Country Link
US (1) US4736229A (de)
EP (2) EP0125666B1 (de)
AT (2) ATE108912T1 (de)
DE (2) DE3486325T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5123847A (en) * 1983-05-11 1992-06-23 Holmberg Scott H Method of manufacturing flat panel backplanes, display transistors
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
EP0211402B1 (de) * 1985-08-02 1991-05-08 General Electric Company Verfahren und Struktur für dünnfilmtransistorgesteuerte Flüssigkristallmatrixanordnungen
US4646424A (en) * 1985-08-02 1987-03-03 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
US4933296A (en) * 1985-08-02 1990-06-12 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
JPS6280626A (ja) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd 液晶表示素子
GB2185622B (en) * 1985-11-27 1989-10-11 Sharp Kk Thin film transistor array
JPS62229873A (ja) * 1986-03-29 1987-10-08 Hitachi Ltd 薄膜半導体装置の製造方法
JPS62162857U (de) * 1986-04-02 1987-10-16
FR2605132B1 (fr) * 1986-10-14 1988-12-09 Thomson Csf Ecran de visualisation electrooptique a transistors de commande et procede de realisation
JPS63265223A (ja) * 1987-04-23 1988-11-01 Alps Electric Co Ltd 薄膜トランジスタアレイおよびその製法
JPH0690372B2 (ja) * 1987-08-26 1994-11-14 シャープ株式会社 液晶表示素子
US4778258A (en) * 1987-10-05 1988-10-18 General Electric Company Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
JP2650730B2 (ja) * 1988-08-08 1997-09-03 シャープ株式会社 炭化珪素半導体を用いたｐｎ接合型発光ダイオード
US4961630A (en) * 1989-03-15 1990-10-09 Ovonic Imaging Systems, Inc. Liquid crystal display with auxiliary pixel capacitance interconnected through substrate
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
US5017989A (en) * 1989-12-06 1991-05-21 Xerox Corporation Solid state radiation sensor array panel
US5058995A (en) * 1990-03-15 1991-10-22 Thomson Consumer Electronics, Inc. Pixel electrode structure for liquid crystal display devices
US5200847A (en) * 1990-05-01 1993-04-06 Casio Computer Co., Ltd. Liquid crystal display device having driving circuit forming on a heat-resistant sub-substrate
US5198694A (en) * 1990-10-05 1993-03-30 General Electric Company Thin film transistor structure with improved source/drain contacts
US5559399A (en) * 1992-06-11 1996-09-24 Norden Systems, Inc. Low resistance, thermally stable electrode structure for electroluminescent displays
US6069443A (en) * 1997-06-23 2000-05-30 Fed Corporation Passive matrix OLED display
KR101086478B1 (ko) * 2004-05-27 2011-11-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
TWI312900B (en) * 2004-10-15 2009-08-01 Hannstar Display Corp Methods for manufacturing glass and for manufacturing thin film transistor with lower glass sag
EP2030481B1 (de) 2006-05-10 2019-03-06 LG Display Co., Ltd. Herstellungsverfahren für ein organisches elektronisches bauelement
JP5252184B2 (ja) * 2008-03-13 2013-07-31 アイシン精機株式会社 凹凸表面検査装置
JP2010206154A (ja) * 2009-02-09 2010-09-16 Hitachi Displays Ltd 表示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675090A (en) * 1968-11-04 1972-07-04 Energy Conversion Devices Inc Film deposited semiconductor devices
JPS57106084A (en) * 1980-12-23 1982-07-01 Toshiba Corp Amorphous silicon diode
JPS57205712A (en) * 1981-06-12 1982-12-16 Seiko Epson Corp Production of liquid crystal display body

Also Published As

Publication number Publication date
US4736229A (en) 1988-04-05
EP0411726A2 (de) 1991-02-06
DE3486325D1 (de) 1994-08-25
DE3484880D1 (de) 1991-09-12
EP0411726A3 (en) 1991-07-03
EP0125666A3 (en) 1986-03-26
EP0125666A2 (de) 1984-11-21
ATE66095T1 (de) 1991-08-15
EP0125666B1 (de) 1991-08-07
EP0411726B1 (de) 1994-07-20
DE3486325T2 (de) 1995-01-19

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee