ATE409891T1 - Neuartiges resistmaterial und verfahren zur bildung einer strukturierten resistschicht auf einem substrat - Google Patents

Neuartiges resistmaterial und verfahren zur bildung einer strukturierten resistschicht auf einem substrat

Info

Publication number
ATE409891T1
ATE409891T1 AT05783896T AT05783896T ATE409891T1 AT E409891 T1 ATE409891 T1 AT E409891T1 AT 05783896 T AT05783896 T AT 05783896T AT 05783896 T AT05783896 T AT 05783896T AT E409891 T1 ATE409891 T1 AT E409891T1
Authority
AT
Austria
Prior art keywords
cross
resist material
layer
actinic radiation
coating layer
Prior art date
Application number
AT05783896T
Other languages
English (en)
Inventor
Richard Palmer
Alex Robinson
Jon Preece
Original Assignee
Univ Birmingham
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Birmingham filed Critical Univ Birmingham
Application granted granted Critical
Publication of ATE409891T1 publication Critical patent/ATE409891T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
AT05783896T 2004-09-17 2005-09-19 Neuartiges resistmaterial und verfahren zur bildung einer strukturierten resistschicht auf einem substrat ATE409891T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0420704A GB0420704D0 (en) 2004-09-17 2004-09-17 Novel resist material and method for forming a patterned resist layer on a substrate

Publications (1)

Publication Number Publication Date
ATE409891T1 true ATE409891T1 (de) 2008-10-15

Family

ID=33306755

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05783896T ATE409891T1 (de) 2004-09-17 2005-09-19 Neuartiges resistmaterial und verfahren zur bildung einer strukturierten resistschicht auf einem substrat

Country Status (7)

Country Link
US (1) US7670749B2 (de)
EP (1) EP1789850B1 (de)
JP (1) JP4768740B2 (de)
AT (1) ATE409891T1 (de)
DE (1) DE602005010099D1 (de)
GB (1) GB0420704D0 (de)
WO (1) WO2006030239A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9256126B2 (en) 2012-11-14 2016-02-09 Irresistible Materials Ltd Methanofullerenes
JP6157160B2 (ja) * 2013-03-15 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 上層膜形成用組成物およびそれを用いたレジストパターン形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2599007B2 (ja) * 1989-11-13 1997-04-09 富士写真フイルム株式会社 ポジ型感光性組成物
US6458506B2 (en) * 1998-08-14 2002-10-01 Shipley Company, Llc Photoacid generators and photoresists comprising same
GB9827798D0 (en) * 1998-12-17 1999-02-10 Agency Ind Science Techn Electron beam resist
JP2004061945A (ja) * 2002-07-30 2004-02-26 Fuji Photo Film Co Ltd 画像記録材料
JP4084622B2 (ja) * 2002-09-25 2008-04-30 富士フイルム株式会社 平版印刷版原版

Also Published As

Publication number Publication date
WO2006030239A2 (en) 2006-03-23
US20070298328A1 (en) 2007-12-27
JP4768740B2 (ja) 2011-09-07
DE602005010099D1 (de) 2008-11-13
EP1789850B1 (de) 2008-10-01
JP2008513821A (ja) 2008-05-01
EP1789850A2 (de) 2007-05-30
WO2006030239A3 (en) 2006-05-11
US7670749B2 (en) 2010-03-02
GB0420704D0 (en) 2004-10-20

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Legal Events

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