CN1143260A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1143260A
CN1143260A CN96108208A CN96108208A CN1143260A CN 1143260 A CN1143260 A CN 1143260A CN 96108208 A CN96108208 A CN 96108208A CN 96108208 A CN96108208 A CN 96108208A CN 1143260 A CN1143260 A CN 1143260A
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CN
China
Prior art keywords
semiconductor device
soi layer
impurity
foreign ion
soi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN96108208A
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English (en)
Chinese (zh)
Inventor
黄儁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of CN1143260A publication Critical patent/CN1143260A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers

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  • Element Separation (AREA)
CN96108208A 1995-06-20 1996-06-19 半导体器件及其制造方法 Pending CN1143260A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR16405/95 1995-06-20
KR1019950016405A KR0154292B1 (ko) 1995-06-20 1995-06-20 반도체 소자의 소자분리막 형성방법

Publications (1)

Publication Number Publication Date
CN1143260A true CN1143260A (zh) 1997-02-19

Family

ID=19417576

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96108208A Pending CN1143260A (zh) 1995-06-20 1996-06-19 半导体器件及其制造方法

Country Status (3)

Country Link
JP (1) JPH098123A (ja)
KR (1) KR0154292B1 (ja)
CN (1) CN1143260A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100308198B1 (ko) * 1999-09-14 2001-11-07 윤종용 에스오아이 반도체 소자 분리 방법
JP4175650B2 (ja) * 2004-08-26 2008-11-05 シャープ株式会社 半導体装置の製造方法
US7875931B2 (en) 2006-04-28 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with isolation using impurity
JP5188095B2 (ja) * 2006-04-28 2013-04-24 株式会社半導体エネルギー研究所 半導体装置
JP2008252066A (ja) * 2007-03-06 2008-10-16 Denso Corp 半導体装置
EP3823014B1 (en) * 2019-11-15 2024-07-31 Infineon Technologies AG Devices including radio frequency devices and methods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218364A (ja) * 1992-01-31 1993-08-27 Canon Inc 半導体基体の形成方法
JP3277957B2 (ja) * 1993-01-24 2002-04-22 ソニー株式会社 Ｓｏｉ半導体装置の製造方法
JPH0774242A (ja) * 1993-09-03 1995-03-17 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR970003791A (ko) 1997-01-29
JPH098123A (ja) 1997-01-10
KR0154292B1 (ko) 1998-12-01

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