JP3049100B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number: JP3049100B2
Authority: JP; Japan
Prior art keywords: forming; insulating film; electrode; gate; layer
Prior art date: 1991-03-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP3037461A

Other languages

English (en)

Japanese (ja)

Other versions

JPH04275457A (ja

Inventor

泰示江間

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-03-04

Filing date

1991-03-04

Publication date

2000-06-05

1991-03-04 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1991-03-04 Priority to JP3037461A priority Critical patent/JP3049100B2/ja

1992-02-28 Priority to EP92103453A priority patent/EP0502438B1/de

1992-03-04 Priority to KR92003541A priority patent/KR960011941B1/ko

1992-03-04 Priority to US07/846,008 priority patent/US5325327A/en

1992-10-01 Publication of JPH04275457A publication Critical patent/JPH04275457A/ja

2000-06-05 Application granted granted Critical

2000-06-05 Publication of JP3049100B2 publication Critical patent/JP3049100B2/ja

2015-06-05 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

Non-Volatile Memory (AREA)
Semiconductor Memories (AREA)

JP3037461A 1991-03-04 1991-03-04 半導体装置及びその製造方法 Expired - Fee Related JP3049100B2 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP3037461A JP3049100B2 (ja)	1991-03-04	1991-03-04	半導体装置及びその製造方法
EP92103453A EP0502438B1 (de)	1991-03-04	1992-02-28	Nichtflüchtiger Speicher, Halbleiterspeicheranordnung mit dem nichtflüchtigen Speicher und Verfahren zur Herstellung der Halbleiterspeicheranordnung
KR92003541A KR960011941B1 (en)	1991-03-04	1992-03-04	Non-volatile memory semiconductor memory device having the non-volatile memory
US07/846,008 US5325327A (en)	1991-03-04	1992-03-04	Non-volatile memory, semiconductor memory device having the non-volatile memory

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP3037461A JP3049100B2 (ja)	1991-03-04	1991-03-04	半導体装置及びその製造方法

Publications (2)

Publication Number	Publication Date
JPH04275457A JPH04275457A (ja)	1992-10-01
JP3049100B2 true JP3049100B2 (ja)	2000-06-05

Family

ID=12498170

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP3037461A Expired - Fee Related JP3049100B2 (ja)	1991-03-04	1991-03-04	半導体装置及びその製造方法

Country Status (4)

Country	Link
US (1)	US5325327A (de)
EP (1)	EP0502438B1 (de)
JP (1)	JP3049100B2 (de)
KR (1)	KR960011941B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5526307A (en) *	1992-01-22	1996-06-11	Macronix International Co., Ltd.	Flash EPROM integrated circuit architecture
JP3348248B2 (ja) *	1992-04-22	2002-11-20	富士通株式会社	半導体記憶装置及びその情報の消去・書き込み方法
JPH0644791A (ja) *	1992-05-08	1994-02-18	Seiko Epson Corp	不揮発性半導体装置
JP3348466B2 (ja) *	1992-06-09	2002-11-20	セイコーエプソン株式会社	不揮発性半導体装置
JPH06151780A (ja) *	1992-11-12	1994-05-31	Nippon Precision Circuits Kk	半導体装置
KR100277267B1 (ko) *	1992-11-25	2001-02-01	사와무라 시코	반도체 불휘발성 메모리 및 그 제조방법
US5555204A (en) *	1993-06-29	1996-09-10	Kabushiki Kaisha Toshiba	Non-volatile semiconductor memory device
JPH07235616A (ja) *	1993-12-28	1995-09-05	Matsushita Electric Ind Co Ltd	半導体装置および半導体装置の製造方法
US5631864A (en) *	1995-07-28	1997-05-20	Micron Quantum Devices, Inc.	Memory array having a reduced number of metal source lines
US6344392B1 (en) *	1998-11-16	2002-02-05	Vanguard International Semiconductor Corporation	Methods of manufacture of crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor
US6266272B1 (en) *	1999-07-30	2001-07-24	International Business Machines Corporation	Partially non-volatile dynamic random access memory formed by a plurality of single transistor cells used as DRAM cells and EPROM cells
US7352024B2 (en)	2001-02-22	2008-04-01	Sharp Kabushiki Kaisha	Semiconductor storage device and semiconductor integrated circuit
US7535060B2 (en)	2006-03-08	2009-05-19	Freescale Semiconductor, Inc.	Charge storage structure formation in transistor with vertical channel region

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4672580A (en) *	1985-04-30	1987-06-09	Advanced Micro Devices, Inc.	Memory cell providing simultaneous non-destructive access to volatile and non-volatile data
FR2603128B1 (fr) *	1986-08-21	1988-11-10	Commissariat Energie Atomique	Cellule de memoire eprom et son procede de fabrication
JPS63179569A (ja) *	1987-01-21	1988-07-23	Hitachi Ltd	半導体集積回路装置の製造方法
US5057448A (en) *	1988-02-26	1991-10-15	Hitachi, Ltd.	Method of making a semiconductor device having DRAM cells and floating gate memory cells
JP2617972B2 (ja) *	1988-02-26	1997-06-11	株式会社日立製作所	半導体集積回路装置の製造方法
JPH01259556A (ja) *	1988-04-11	1989-10-17	Sharp Corp	不揮発性メモリ装置
JPH02356A (ja) *	1988-05-20	1990-01-05	Hitachi Ltd	半導体装置
JPH0235771A (ja) *	1988-07-26	1990-02-06	Nec Corp	半導体記憶装置
JP2509697B2 (ja) *	1989-04-28	1996-06-26	株式会社東芝	半導体装置およびその製造方法
JPH0338061A (ja) *	1989-07-05	1991-02-19	Fujitsu Ltd	半導体記憶装置

1991
- 1991-03-04 JP JP3037461A patent/JP3049100B2/ja not_active Expired - Fee Related
1992
- 1992-02-28 EP EP92103453A patent/EP0502438B1/de not_active Expired - Lifetime
- 1992-03-04 US US07/846,008 patent/US5325327A/en not_active Expired - Lifetime
- 1992-03-04 KR KR92003541A patent/KR960011941B1/ko not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0502438A2 (de)	1992-09-09
JPH04275457A (ja)	1992-10-01
KR960011941B1 (en)	1996-09-04
EP0502438A3 (en)	1993-02-24
KR920018958A (ko)	1992-10-22
EP0502438B1 (de)	1998-01-07
US5325327A (en)	1994-06-28

Legal Events

Date	Code	Title	Description
2000-03-14	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20000314
2008-01-17	FPAY	Renewal fee payment (event date is renewal date of database)	Free format text: PAYMENT UNTIL: 20080324 Year of fee payment: 8
2008-01-22	FPAY	Renewal fee payment (event date is renewal date of database)	Free format text: PAYMENT UNTIL: 20090324 Year of fee payment: 9
2008-08-01	FPAY	Renewal fee payment (event date is renewal date of database)	Free format text: PAYMENT UNTIL: 20090324 Year of fee payment: 9
2008-08-01	S111	Request for change of ownership or part of ownership	Free format text: JAPANESE INTERMEDIATE CODE: R313111
2008-08-11	FPAY	Renewal fee payment (event date is renewal date of database)	Free format text: PAYMENT UNTIL: 20090324 Year of fee payment: 9
2008-08-11	R350	Written notification of registration of transfer	Free format text: JAPANESE INTERMEDIATE CODE: R350
2009-03-24	LAPS	Cancellation because of no payment of annual fees

Publication	Publication Date	Title
JP3150362B2 (ja)	2001-03-26	Ｅｐｒｏｍ仮想接地アレイ
WO2000070683A1 (en)	2000-11-23	Semiconductor memory
JPH0567791A (ja)	1993-03-19	電気的に書込および消去可能な半導体記憶装置およびその製造方法
WO2002067320A1 (en)	2002-08-29	Semiconductor storage device and semiconductor integrated circuit
JP2630278B2 (ja)	1997-07-16	不揮発性半導体記憶装置及びその製造方法
JP2003209195A (ja)	2003-07-25	不揮発性メモリ素子及びその製造方法
JP2655124B2 (ja)	1997-09-17	不揮発性半導体記憶装置およびその製造方法
JPS6341240B2 (de)	1988-08-16
JPH04275457A (ja)	1992-10-01	半導体装置及びその製造方法
US6037226A (en)	2000-03-14	Method of making contactless nonvolatile semiconductor memory with asymmetrical floating gate
US6894361B2 (en)	2005-05-17	Semiconductor device
JP2818190B2 (ja)	1998-10-30	不揮発性半導体記憶装置およびその製造方法
JP2864547B2 (ja)	1999-03-03	大規模ｅｐｒｏｍメモリ及びその製造方法
TWI241016B (en)	2005-10-01	Nonvolatile semiconductor memory
JPH1093056A (ja)	1998-04-10	メモリセルアレー
JPH10308463A (ja)	1998-11-17	非揮発性メモリ装置及びその製造方法
JPH0334578A (ja)	1991-02-14	不揮発性半導体記憶装置およびその製造方法
JP3226589B2 (ja)	2001-11-05	不揮発性半導体記憶装置の製造方法
JP2848211B2 (ja)	1999-01-20	不揮発性半導体記憶装置
KR100417029B1 (ko)	2004-02-05	메모리 셀의 문턱 전압 편차가 작은 비휘발성 반도체메모리의 제조 방법
JPH04233278A (ja)	1992-08-21	ポリシリコンスペーサを使用した分割ゲートｅｐｒｏｍセル
JP2003332472A (ja)	2003-11-21	不揮発性半導体メモリ装置およびその製造方法
JP2989205B2 (ja)	1999-12-13	不揮発性半導体メモリ装置の製造方法
JPH0878544A (ja)	1996-03-22	不揮発性半導体記憶装置
JPH0637326A (ja)	1994-02-10	不揮発性半導体記憶装置およびその製造方法