JPH01136371A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPH01136371A
JPH01136371A JP62295671A JP29567187A JPH01136371A JP H01136371 A JPH01136371 A JP H01136371A JP 62295671 A JP62295671 A JP 62295671A JP 29567187 A JP29567187 A JP 29567187A JP H01136371 A JPH01136371 A JP H01136371A
Authority
JP
Japan
Prior art keywords
region
silicon
semiconductor device
layer
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62295671A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0557735B2 (de
Inventor
Hisayo Sasaki
佐々木　寿代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62295671A priority Critical patent/JPH01136371A/ja
Publication of JPH01136371A publication Critical patent/JPH01136371A/ja
Publication of JPH0557735B2 publication Critical patent/JPH0557735B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP62295671A 1987-11-24 1987-11-24 半導体装置の製造方法 Granted JPH01136371A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62295671A JPH01136371A (ja) 1987-11-24 1987-11-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62295671A JPH01136371A (ja) 1987-11-24 1987-11-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH01136371A true JPH01136371A (ja) 1989-05-29
JPH0557735B2 JPH0557735B2 (de) 1993-08-24

Family

ID=17823679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62295671A Granted JPH01136371A (ja) 1987-11-24 1987-11-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH01136371A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188367A (ja) * 1989-09-28 1991-08-16 Agency Of Ind Science & Technol 炭素微小電極及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188367A (ja) * 1989-09-28 1991-08-16 Agency Of Ind Science & Technol 炭素微小電極及びその製造方法

Also Published As

Publication number Publication date
JPH0557735B2 (de) 1993-08-24

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Legal Events

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