JPH02137034U - - Google Patents
Info
- Publication number
- JPH02137034U JPH02137034U JP4300189U JP4300189U JPH02137034U JP H02137034 U JPH02137034 U JP H02137034U JP 4300189 U JP4300189 U JP 4300189U JP 4300189 U JP4300189 U JP 4300189U JP H02137034 U JPH02137034 U JP H02137034U
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- floor surface
- chamber
- raw material
- material storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の一実施例の説明図、第２図は
従来例の説明図である。 １…（結晶育成用）容器、２…原料収容室、２
ａ，３ａ…床面、３…結晶成長室、４…基板、４
ａ…基板表面、５…基板ホルダ、６…メルト、６
ａ…しずく、７…薄膜単結晶、８…段差。
従来例の説明図である。 １…（結晶育成用）容器、２…原料収容室、２
ａ，３ａ…床面、３…結晶成長室、４…基板、４
ａ…基板表面、５…基板ホルダ、６…メルト、６
ａ…しずく、７…薄膜単結晶、８…段差。
Claims (1)
- 傾斜法により液相エピタキシヤル結晶を育成す
る結晶育成用容器において、原料収容室の床面が
結晶成長室の床面よりも低く段差を設けられてい
ることを特徴とする結晶育成用容器。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4300189U JPH02137034U (ja) | 1989-04-14 | 1989-04-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4300189U JPH02137034U (ja) | 1989-04-14 | 1989-04-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02137034U true JPH02137034U (ja) | 1990-11-15 |
Family
ID=31555040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4300189U Pending JPH02137034U (ja) | 1989-04-14 | 1989-04-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02137034U (ja) |
-
1989
- 1989-04-14 JP JP4300189U patent/JPH02137034U/ja active Pending
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