JPH11233785A - Ｓｏｉｍｏｓｆｅｔおよびその製造方法 - Google Patents

Ｓｏｉｍｏｓｆｅｔおよびその製造方法

Info

Publication number
JPH11233785A
JPH11233785A JP10035137A JP3513798A JPH11233785A JP H11233785 A JPH11233785 A JP H11233785A JP 10035137 A JP10035137 A JP 10035137A JP 3513798 A JP3513798 A JP 3513798A JP H11233785 A JPH11233785 A JP H11233785A
Authority
JP
Japan
Prior art keywords
region
silicon
drain
oxide film
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10035137A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11233785A5 (th
Inventor
Hideaki Matsuhashi
秀明 松橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP10035137A priority Critical patent/JPH11233785A/ja
Publication of JPH11233785A publication Critical patent/JPH11233785A/ja
Publication of JPH11233785A5 publication Critical patent/JPH11233785A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP10035137A 1998-02-17 1998-02-17 Ｓｏｉｍｏｓｆｅｔおよびその製造方法 Pending JPH11233785A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10035137A JPH11233785A (ja) 1998-02-17 1998-02-17 Ｓｏｉｍｏｓｆｅｔおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10035137A JPH11233785A (ja) 1998-02-17 1998-02-17 Ｓｏｉｍｏｓｆｅｔおよびその製造方法

Publications (2)

Publication Number Publication Date
JPH11233785A true JPH11233785A (ja) 1999-08-27
JPH11233785A5 JPH11233785A5 (th) 2005-08-11

Family

ID=12433537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10035137A Pending JPH11233785A (ja) 1998-02-17 1998-02-17 Ｓｏｉｍｏｓｆｅｔおよびその製造方法

Country Status (1)

Country Link
JP (1) JPH11233785A (th)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2800908A1 (fr) * 1999-10-25 2001-05-11 Samsung Electronics Co Ltd Circuit integre a semiconducteur du type silicium sur isolant permettant d'eliminer les effets de corps flottant et son procede de fabrication
US6281593B1 (en) * 1999-12-06 2001-08-28 International Business Machines Corporation SOI MOSFET body contact and method of fabrication
JP2002217420A (ja) * 2000-12-26 2002-08-02 Samsung Electronics Co Ltd Ｓｏｉトランジスタのフローティングボデー効果を除去するためのｓｏｉ半導体集積回路及びその製造方法
US6542046B2 (en) 2000-09-08 2003-04-01 Murata Manufacturing Co. Ltd. Directional coupler, antenna device, and radar system
JP2003174172A (ja) * 2001-09-26 2003-06-20 Seiko Epson Corp 電界効果トランジスタおよびこれを用いた電気光学装置、半導体装置ならびに電子機器
US6624475B2 (en) * 2000-03-17 2003-09-23 International Business Machines Corporation SOI low capacitance body contact
JP2006303530A (ja) * 1998-12-24 2006-11-02 Renesas Technology Corp 半導体装置及びその製造方法並びに半導体装置の設計方法
JP2007287718A (ja) * 2006-04-12 2007-11-01 Renesas Technology Corp 半導体装置
JP2007287747A (ja) * 2006-04-12 2007-11-01 Renesas Technology Corp 半導体装置
JP2007324530A (ja) * 2006-06-05 2007-12-13 Oki Electric Ind Co Ltd 半導体装置
JP2012212918A (ja) * 2012-06-21 2012-11-01 Renesas Electronics Corp 半導体装置
US11715796B2 (en) 2021-03-12 2023-08-01 Kabushiki Kaisha Toshiba High frequency transistor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303530A (ja) * 1998-12-24 2006-11-02 Renesas Technology Corp 半導体装置及びその製造方法並びに半導体装置の設計方法
JP2001168337A (ja) * 1999-10-25 2001-06-22 Samsung Electronics Co Ltd Ｓｏｉ半導体集積回路及びその製造方法
FR2800908A1 (fr) * 1999-10-25 2001-05-11 Samsung Electronics Co Ltd Circuit integre a semiconducteur du type silicium sur isolant permettant d'eliminer les effets de corps flottant et son procede de fabrication
US6281593B1 (en) * 1999-12-06 2001-08-28 International Business Machines Corporation SOI MOSFET body contact and method of fabrication
US6624475B2 (en) * 2000-03-17 2003-09-23 International Business Machines Corporation SOI low capacitance body contact
US6542046B2 (en) 2000-09-08 2003-04-01 Murata Manufacturing Co. Ltd. Directional coupler, antenna device, and radar system
JP2002217420A (ja) * 2000-12-26 2002-08-02 Samsung Electronics Co Ltd Ｓｏｉトランジスタのフローティングボデー効果を除去するためのｓｏｉ半導体集積回路及びその製造方法
JP2003174172A (ja) * 2001-09-26 2003-06-20 Seiko Epson Corp 電界効果トランジスタおよびこれを用いた電気光学装置、半導体装置ならびに電子機器
JP2007287718A (ja) * 2006-04-12 2007-11-01 Renesas Technology Corp 半導体装置
JP2007287747A (ja) * 2006-04-12 2007-11-01 Renesas Technology Corp 半導体装置
JP2007324530A (ja) * 2006-06-05 2007-12-13 Oki Electric Ind Co Ltd 半導体装置
JP2012212918A (ja) * 2012-06-21 2012-11-01 Renesas Electronics Corp 半導体装置
US11715796B2 (en) 2021-03-12 2023-08-01 Kabushiki Kaisha Toshiba High frequency transistor

Similar Documents

Publication Publication Date Title
JP3462301B2 (ja) 半導体装置及びその製造方法
JP4614522B2 (ja) 半導体装置及びその製造方法
JP3793808B2 (ja) 電界効果トランジスタの製造方法
US20020177260A1 (en) Semiconductor device and method of fabricating the same
US20100314686A1 (en) Semiconductor device
JP2003318405A (ja) 半導体装置およびその製造方法
JP3383219B2 (ja) Ｓｏｉ半導体装置及びその製造方法
KR19990079189A (ko) 반도체 소자 및 그의 제조 방법
JPH1093093A (ja) 半導体装置およびその製造方法
US6352872B1 (en) SOI device with double gate and method for fabricating the same
US8048759B2 (en) Semiconductor device and method of manufacturing the same
JP2708027B2 (ja) 半導体装置およびその製造方法
KR100367049B1 (ko) 반도체 장치의 제조방법
JPH0945904A (ja) 半導体装置およびその製造方法
JPH10340965A (ja) 半導体装置およびその製造方法
JP2007043069A (ja) 半導体装置および半導体装置の製造方法
JP3038740B2 (ja) 半導体装置の製造方法
JP2519541B2 (ja) 半導体装置
JPH0298939A (ja) 半導体装置の製造方法
KR100415191B1 (ko) 비대칭형 씨모스 트랜지스터의 제조 방법
JPH01264265A (ja) 半導体装置およびその製造方法
JP2004079790A (ja) 完全空乏型ｓｏｉ−ｍｏｓトランジスタおよびその製造方法
KR890004969B1 (ko) 반도체 장치의 제조방법
JPH1050857A (ja) 半導体装置の製造方法
JPH09139382A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050125

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050125

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070702

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070918

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20071120