JPS5263680A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5263680A
JPS5263680A JP50139648A JP13964875A JPS5263680A JP S5263680 A JPS5263680 A JP S5263680A JP 50139648 A JP50139648 A JP 50139648A JP 13964875 A JP13964875 A JP 13964875A JP S5263680 A JPS5263680 A JP S5263680A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
photoetching
deterioration
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50139648A
Other languages
English (en)
Inventor
Toshio Sugawa
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50139648A priority Critical patent/JPS5263680A/ja
Publication of JPS5263680A publication Critical patent/JPS5263680A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP50139648A 1975-11-19 1975-11-19 Production of semiconductor device Pending JPS5263680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50139648A JPS5263680A (en) 1975-11-19 1975-11-19 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50139648A JPS5263680A (en) 1975-11-19 1975-11-19 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5263680A true JPS5263680A (en) 1977-05-26

Family

ID=15250157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50139648A Pending JPS5263680A (en) 1975-11-19 1975-11-19 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5263680A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599722A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Preparation of semiconductor device
JPS582076A (ja) * 1981-06-23 1983-01-07 シ−メンス・アクチエンゲゼルシヤフト シヨツトキダイオ−ドの製造方法
JPS5884432A (ja) * 1981-10-28 1983-05-20 ウエスターン・エレクトリック・カムパニー・インコーポレーテッド サブミクロンパタ−ン形成方法
JPS61104662A (ja) * 1984-10-26 1986-05-22 シーメンス、アクチエンゲゼルシヤフト 半導体表面のシヨツトキ・バリア接合とその製造方法
US5027167A (en) * 1988-01-22 1991-06-25 The Agency Of Industrial Science And Technology Semiconductor intergrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599722A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Preparation of semiconductor device
JPS582076A (ja) * 1981-06-23 1983-01-07 シ−メンス・アクチエンゲゼルシヤフト シヨツトキダイオ−ドの製造方法
JPS5884432A (ja) * 1981-10-28 1983-05-20 ウエスターン・エレクトリック・カムパニー・インコーポレーテッド サブミクロンパタ−ン形成方法
JPS61104662A (ja) * 1984-10-26 1986-05-22 シーメンス、アクチエンゲゼルシヤフト 半導体表面のシヨツトキ・バリア接合とその製造方法
US5027167A (en) * 1988-01-22 1991-06-25 The Agency Of Industrial Science And Technology Semiconductor intergrated circuit

Similar Documents

Publication Publication Date Title
JPS5356972A (en) Mesa type semiconductor device
JPS5324277A (en) Semiconductor devic e and its production
JPS5263680A (en) Production of semiconductor device
JPS5228879A (en) Semiconductor device and method for its production
JPS5261960A (en) Production of semiconductor device
JPS53137685A (en) Manufacture for semiconductor device
JPS524789A (en) Semiconductor equipment
JPS5272186A (en) Production of mis type semiconductor device
JPS5275977A (en) Production of compound semiconductor device
JPS5273673A (en) Production of semiconductor device
JPS51132762A (en) Heat-treatment method of semiconductor device
JPS5370761A (en) Production of semiconductor device
JPS5317283A (en) Production of semiconductor device
JPS5258456A (en) Formation of semiconductor pellet
JPS52141183A (en) Production of semiconductor devices
JPS5267981A (en) Manufacture of semiconductor unit
JPS5339090A (en) Insulated gate type semiconductor device
JPS5232682A (en) Manufacturing process of semiconductor device
JPS5389691A (en) Semiconductor device
JPS5331966A (en) Production of semiconductor device
JPS5224475A (en) Planar thyristor process
JPS526081A (en) Semiconductor wafer
JPS53108385A (en) Manufacture for semiconductor device
JPS5235984A (en) Semiconductor device
JPS5334478A (en) Semiconductor device