JPS5593247A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5593247A
JPS5593247A JP83779A JP83779A JPS5593247A JP S5593247 A JPS5593247 A JP S5593247A JP 83779 A JP83779 A JP 83779A JP 83779 A JP83779 A JP 83779A JP S5593247 A JPS5593247 A JP S5593247A
Authority
JP
Japan
Prior art keywords
polarity
lead
principal surface
semiconductor
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP83779A
Other languages
Japanese (ja)
Inventor
Yasuhiko Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP83779A priority Critical patent/JPS5593247A/en
Publication of JPS5593247A publication Critical patent/JPS5593247A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE: To simplify manufacturing process by enabling perfect arrangement of polarity and assembly using magnetic material for one of the leads.
CONSTITUTION: Nickel-metalized layer 2 and bump electrode of silver are formed on one principal surface and the other principal surface of semiconductor sabstrate respectively. Lead 4 shall be Dumet wire and magnetized, and semiconductor substrate 1 is adhered on heat sink 4a with nickel-metalized layer 2 placed right under the said substrate. Glass casing is placed over and heat sink 5a with the lead 5 is inserted and sealed. If the principal surface of semiconductor substrate and the lead are predetermined in accordance with the polarity of semiconductor base, it is possible to simplify manufacturing process by performing an assembly with polarity perfectly arranged.
COPYRIGHT: (C)1980,JPO&Japio
JP83779A 1979-01-06 1979-01-06 Semiconductor device Pending JPS5593247A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP83779A JPS5593247A (en) 1979-01-06 1979-01-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP83779A JPS5593247A (en) 1979-01-06 1979-01-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5593247A true JPS5593247A (en) 1980-07-15

Family

ID=11484728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP83779A Pending JPS5593247A (en) 1979-01-06 1979-01-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5593247A (en)

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