JPS5928358A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5928358A
JPS5928358A JP57138684A JP13868482A JPS5928358A JP S5928358 A JPS5928358 A JP S5928358A JP 57138684 A JP57138684 A JP 57138684A JP 13868482 A JP13868482 A JP 13868482A JP S5928358 A JPS5928358 A JP S5928358A
Authority
JP
Japan
Prior art keywords
film
etching
resist
insulating film
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57138684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427703B2 (2
Inventor
Katsuhiko Hieda
克彦 稗田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57138684A priority Critical patent/JPS5928358A/ja
Publication of JPS5928358A publication Critical patent/JPS5928358A/ja
Publication of JPH0427703B2 publication Critical patent/JPH0427703B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP57138684A 1982-08-10 1982-08-10 半導体装置の製造方法 Granted JPS5928358A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57138684A JPS5928358A (ja) 1982-08-10 1982-08-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57138684A JPS5928358A (ja) 1982-08-10 1982-08-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5928358A true JPS5928358A (ja) 1984-02-15
JPH0427703B2 JPH0427703B2 (2) 1992-05-12

Family

ID=15227684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57138684A Granted JPS5928358A (ja) 1982-08-10 1982-08-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5928358A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984548A (ja) * 1982-11-08 1984-05-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS61104626A (ja) * 1984-10-29 1986-05-22 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS6224627A (ja) * 1985-07-25 1987-02-02 Sony Corp ドライエツチング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363871A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5791537A (en) * 1980-11-29 1982-06-07 Toshiba Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363871A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5791537A (en) * 1980-11-29 1982-06-07 Toshiba Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984548A (ja) * 1982-11-08 1984-05-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS61104626A (ja) * 1984-10-29 1986-05-22 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS6224627A (ja) * 1985-07-25 1987-02-02 Sony Corp ドライエツチング方法

Also Published As

Publication number Publication date
JPH0427703B2 (2) 1992-05-12

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