JPS5952860A - 半導体集積回路装置 - Google Patents
半導体集積回路装置Info
- Publication number
- JPS5952860A JPS5952860A JP57165513A JP16551382A JPS5952860A JP S5952860 A JPS5952860 A JP S5952860A JP 57165513 A JP57165513 A JP 57165513A JP 16551382 A JP16551382 A JP 16551382A JP S5952860 A JPS5952860 A JP S5952860A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- voltage
- integrated circuit
- currents
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/316—Testing of analog circuits
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57165513A JPS5952860A (ja) | 1982-09-20 | 1982-09-20 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57165513A JPS5952860A (ja) | 1982-09-20 | 1982-09-20 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5952860A true JPS5952860A (ja) | 1984-03-27 |
| JPH0245339B2 JPH0245339B2 (da) | 1990-10-09 |
Family
ID=15813819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57165513A Granted JPS5952860A (ja) | 1982-09-20 | 1982-09-20 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5952860A (da) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6331131A (ja) * | 1986-07-25 | 1988-02-09 | Toshiba Corp | 半導体ウエハ |
| JPS6379643U (da) * | 1986-11-11 | 1988-05-26 | ||
| US5214657A (en) * | 1990-09-21 | 1993-05-25 | Micron Technology, Inc. | Method for fabricating wafer-scale integration wafers and method for utilizing defective wafer-scale integration wafers |
| US5285082A (en) * | 1989-11-08 | 1994-02-08 | U.S. Philips Corporation | Integrated test circuits having pads provided along scribe lines |
| JPH06244252A (ja) * | 1993-02-17 | 1994-09-02 | Nec Corp | 集積回路及びその製造方法 |
| DE19645568A1 (de) * | 1996-03-18 | 1997-09-25 | Mitsubishi Electric Corp | Halbleiterscheibe, Halbleiterbauelement und Herstellungsverfahren für das Halbleiterbauelement |
| US5923047A (en) * | 1997-04-21 | 1999-07-13 | Lsi Logic Corporation | Semiconductor die having sacrificial bond pads for die test |
| US6228684B1 (en) | 1998-12-28 | 2001-05-08 | Fujitsu Limited | Wafer-level package, a method of manufacturing thereof and a method of manufacturing semiconductor devices from such a wafer-level package |
-
1982
- 1982-09-20 JP JP57165513A patent/JPS5952860A/ja active Granted
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6331131A (ja) * | 1986-07-25 | 1988-02-09 | Toshiba Corp | 半導体ウエハ |
| JPS6379643U (da) * | 1986-11-11 | 1988-05-26 | ||
| US5285082A (en) * | 1989-11-08 | 1994-02-08 | U.S. Philips Corporation | Integrated test circuits having pads provided along scribe lines |
| US5214657A (en) * | 1990-09-21 | 1993-05-25 | Micron Technology, Inc. | Method for fabricating wafer-scale integration wafers and method for utilizing defective wafer-scale integration wafers |
| JPH06244252A (ja) * | 1993-02-17 | 1994-09-02 | Nec Corp | 集積回路及びその製造方法 |
| DE19645568B4 (de) * | 1996-03-18 | 2005-03-03 | Mitsubishi Denki K.K. | Herstellungsverfahren für ein Halbleiterbauelement |
| DE19645568A1 (de) * | 1996-03-18 | 1997-09-25 | Mitsubishi Electric Corp | Halbleiterscheibe, Halbleiterbauelement und Herstellungsverfahren für das Halbleiterbauelement |
| US5982042A (en) * | 1996-03-18 | 1999-11-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor wafer including semiconductor device |
| CN1095197C (zh) * | 1996-03-18 | 2002-11-27 | 三菱电机株式会社 | 半导体晶片 |
| US5923047A (en) * | 1997-04-21 | 1999-07-13 | Lsi Logic Corporation | Semiconductor die having sacrificial bond pads for die test |
| US6228684B1 (en) | 1998-12-28 | 2001-05-08 | Fujitsu Limited | Wafer-level package, a method of manufacturing thereof and a method of manufacturing semiconductor devices from such a wafer-level package |
| US6762431B2 (en) | 1998-12-28 | 2004-07-13 | Fujitsu Limited | Wafer-level package with test terminals |
| US7071487B2 (en) | 1998-12-28 | 2006-07-04 | Fujitsu Limited | Wafer-level package having test terminal |
| CN100372109C (zh) * | 1998-12-28 | 2008-02-27 | 富士通株式会社 | 晶片级封装及其制造方法以及由其制造半导体器件的方法 |
| US7399990B2 (en) | 1998-12-28 | 2008-07-15 | Fujitsu Limited | Wafer-level package having test terminal |
| US7642551B2 (en) | 1998-12-28 | 2010-01-05 | Fujitsu Microelectronics Limited | Wafer-level package having test terminal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0245339B2 (da) | 1990-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11428722B2 (en) | Resistance test method using kelvin structure | |
| JP2858390B2 (ja) | 縦型半導体装置の特性測定方法 | |
| US5760600A (en) | Test device for insulated-gate field effect transistor and testing circuit and testing method using the same | |
| GB1503935A (en) | Monolithically integrated semiconductor elements | |
| JPH0245339B2 (da) | ||
| JPH06258384A (ja) | 集積回路試験用電流測定装置および集積回路 | |
| US12287364B2 (en) | Test system and test device | |
| JP3202669B2 (ja) | 電気的特性測定方法 | |
| CN117214649A (zh) | 功率器件测试装置和方法 | |
| US6102962A (en) | Method for estimating quiescent current in integrated circuits | |
| JP3093216B2 (ja) | 半導体装置及びその検査方法 | |
| Ferguson | High fault coverage of in-circuit IC pin faults with a vectorless test technique using parasitic transistors | |
| US12500128B2 (en) | Four-terminal resistance testing structure | |
| JPS6231148A (ja) | 半導体装置 | |
| JPH06105733B2 (ja) | 集積回路装置 | |
| JPS60177277A (ja) | 集積回路の特性試験方法 | |
| JP2000046896A (ja) | 半導体cmos集積回路の試験装置 | |
| JPS6371669A (ja) | 電子回路装置の検査方法 | |
| JP2919312B2 (ja) | 半導体装置の検査方法 | |
| JP2963234B2 (ja) | 高速デバイス試験方法 | |
| JPH0992843A (ja) | 半導体センサの製造方法 | |
| JP2007085735A (ja) | 半導体装置の検査方法 | |
| JPH027449A (ja) | 半導体装置 | |
| JPS59147443A (ja) | 半導体基板 | |
| JPH04217341A (ja) | 半導体集積回路装置 |