JPS6060736A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JPS6060736A
JPS6060736A JP58168267A JP16826783A JPS6060736A JP S6060736 A JPS6060736 A JP S6060736A JP 58168267 A JP58168267 A JP 58168267A JP 16826783 A JP16826783 A JP 16826783A JP S6060736 A JPS6060736 A JP S6060736A
Authority
JP
Japan
Prior art keywords
film
substrate
main surface
oxide film
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58168267A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0420267B2 (cs
Inventor
Akira Kawakatsu
川勝　章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58168267A priority Critical patent/JPS6060736A/ja
Publication of JPS6060736A publication Critical patent/JPS6060736A/ja
Publication of JPH0420267B2 publication Critical patent/JPH0420267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0128—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising multiple local oxidation process steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
JP58168267A 1983-09-14 1983-09-14 半導体集積回路装置の製造方法 Granted JPS6060736A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58168267A JPS6060736A (ja) 1983-09-14 1983-09-14 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58168267A JPS6060736A (ja) 1983-09-14 1983-09-14 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6060736A true JPS6060736A (ja) 1985-04-08
JPH0420267B2 JPH0420267B2 (cs) 1992-04-02

Family

ID=15864843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58168267A Granted JPS6060736A (ja) 1983-09-14 1983-09-14 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6060736A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230160A (ja) * 1988-07-19 1990-01-31 Nec Corp 半導体装置
JPH11289006A (ja) * 1998-03-02 1999-10-19 Samsung Electronics Co Ltd 集積回路にトレンチアイソレ―ションを形成する方法
US8774367B2 (en) 2008-10-22 2014-07-08 Koninklijke Philips N.V. Bearing within an X-ray tube

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230160A (ja) * 1988-07-19 1990-01-31 Nec Corp 半導体装置
JPH11289006A (ja) * 1998-03-02 1999-10-19 Samsung Electronics Co Ltd 集積回路にトレンチアイソレ―ションを形成する方法
US8774367B2 (en) 2008-10-22 2014-07-08 Koninklijke Philips N.V. Bearing within an X-ray tube

Also Published As

Publication number Publication date
JPH0420267B2 (cs) 1992-04-02

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