JPS6068662U - 集積化コンデンサ - Google Patents

集積化コンデンサ

Info

Publication number
JPS6068662U
JPS6068662U JP1983160760U JP16076083U JPS6068662U JP S6068662 U JPS6068662 U JP S6068662U JP 1983160760 U JP1983160760 U JP 1983160760U JP 16076083 U JP16076083 U JP 16076083U JP S6068662 U JPS6068662 U JP S6068662U
Authority
JP
Japan
Prior art keywords
integrated capacitor
capacitor
capacitance
divided
equal parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983160760U
Other languages
English (en)
Inventor
岸　博泰
木本　雄二
森　慶三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1983160760U priority Critical patent/JPS6068662U/ja
Priority to US06/658,418 priority patent/US4626881A/en
Publication of JPS6068662U publication Critical patent/JPS6068662U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は従来のＩＣの要部断面図、第２図は第１図の等
価回路、第３図は本考案の集積化コンデンサを示す要部
断面図、第４図は第３図の等価回路、第５図は本考案の
集積化コンデンサを差動増幅器の入力回路に用いた一応
用例、第６図は第５゛図の要部等価回路を示す。 主な図番の説明、１・・・・・・アルミ電極、２・・・
・・・シ・　リコン酸化膜、３・・・・・・サブストレ
ート、４・・・・・・分離層、５・・・・・・Ｎ領域、
６・・・・・・Ｎ＋領領域７・−・・・・所定の容量値
（Ｃ０）を有するコンデンサ。 −Ｔ　　　’ ｈ　　弓 ＴＢ ＼　　　　　ｂ　　　″″

Claims (1)

    【実用新案登録請求の範囲】
  1. 相対向する電極間容量の他に、付加的にサブストレート
    への分離容量を有する集積化コンデンサにおいて、前記
    コンデンサを２等分して、分割前に共通化された電極と
    互に逆の電極同志を接続し、前記分離容量の影響を軽減
    することを特徴とした集積化コンデンサ。
JP1983160760U 1983-10-17 1983-10-17 集積化コンデンサ Pending JPS6068662U (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1983160760U JPS6068662U (ja) 1983-10-17 1983-10-17 集積化コンデンサ
US06/658,418 US4626881A (en) 1983-10-17 1984-10-05 Capacitor produced of a layer combination of metal, insulator and semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983160760U JPS6068662U (ja) 1983-10-17 1983-10-17 集積化コンデンサ

Publications (1)

Publication Number Publication Date
JPS6068662U true JPS6068662U (ja) 1985-05-15

Family

ID=15721869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983160760U Pending JPS6068662U (ja) 1983-10-17 1983-10-17 集積化コンデンサ

Country Status (2)

Country Link
US (1) US4626881A (ja)
JP (1) JPS6068662U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210859A (ja) * 1988-10-13 1990-08-22 Crystal Semiconductor Corp アナログ―デジタルコンバータのためのデルタ―シグマ変調器

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061823B2 (ja) * 1985-11-13 1994-01-05 日本電気株式会社 半導体集積回路
US4831431A (en) * 1986-03-31 1989-05-16 Honeywell Inc. Capacitance stabilization
US4758873A (en) * 1986-05-16 1988-07-19 National Semiconductor Corporation Balanced MOS capacitor with low stray capacitance and high ESD survival
US4716379A (en) * 1986-06-30 1987-12-29 Motorola, Inc. Differential amplifier including balanced two terminal series RC network
US4786828A (en) * 1987-05-15 1988-11-22 Hoffman Charles R Bias scheme for achieving voltage independent capacitance
US4973922A (en) * 1987-11-27 1990-11-27 At&T Bell Laboratories Voltage controlled variable capacitor and oscillator using it
EP0324036A1 (en) * 1988-01-09 1989-07-19 Signal Processing Technologies, Inc. Capacitance stabilization for A/D and D/A converters
US5687109A (en) * 1988-05-31 1997-11-11 Micron Technology, Inc. Integrated circuit module having on-chip surge capacitors
US5208597A (en) * 1988-10-13 1993-05-04 Crystal Semiconductor Compensated capacitors for switched capacitor input of an analog-to-digital converter
EP0412514A1 (en) * 1989-08-08 1991-02-13 Nec Corporation Capacitance device
JPH03283459A (ja) * 1990-03-30 1991-12-13 Hitachi Ltd 半導体集積回路装置
JP2906832B2 (ja) * 1992-05-29 1999-06-21 日本電気株式会社 全差動型アナログ回路
FR2694450B1 (fr) * 1992-07-30 1994-10-21 Sgs Thomson Microelectronics Condensateur en technologie CMOS.
US5631492A (en) * 1994-01-21 1997-05-20 Motorola Standard cell having a capacitor and a power supply capacitor for reducing noise and method of formation
JP2798020B2 (ja) * 1995-10-25 1998-09-17 日本電気株式会社 半導体集積回路
JPH1012825A (ja) * 1996-06-26 1998-01-16 Oki Electric Ind Co Ltd 半導体集積回路装置
US7728362B2 (en) 2006-01-20 2010-06-01 International Business Machines Corporation Creating integrated circuit capacitance from gate array structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886458A (en) * 1972-12-12 1975-05-27 Sony Corp Frequency converter circuit with integrated injection capacitor
US4214252A (en) * 1977-08-06 1980-07-22 U.S. Philips Corporation Semiconductor device having a MOS-capacitor
US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
NL8003874A (nl) * 1980-07-04 1982-02-01 Philips Nv Veldeffektcapaciteit.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210859A (ja) * 1988-10-13 1990-08-22 Crystal Semiconductor Corp アナログ―デジタルコンバータのためのデルタ―シグマ変調器

Also Published As

Publication number Publication date
US4626881A (en) 1986-12-02

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