JPS6094737A - 半導体装置の製法 - Google Patents

半導体装置の製法

Info

Publication number
JPS6094737A
JPS6094737A JP58203474A JP20347483A JPS6094737A JP S6094737 A JPS6094737 A JP S6094737A JP 58203474 A JP58203474 A JP 58203474A JP 20347483 A JP20347483 A JP 20347483A JP S6094737 A JPS6094737 A JP S6094737A
Authority
JP
Japan
Prior art keywords
silicon substrate
semiconductor device
sides
type
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58203474A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0348658B2 (2
Inventor
Yoshimitsu Tanaka
義光 田中
Toshiro Abe
敏郎 阿部
Shigeaki Tomonari
恵昭 友成
Shuichiro Yamaguchi
周一郎 山口
Kiyoshi Hosoya
清志 細谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP58203474A priority Critical patent/JPS6094737A/ja
Publication of JPS6094737A publication Critical patent/JPS6094737A/ja
Publication of JPH0348658B2 publication Critical patent/JPH0348658B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/191—Preparing SOI wafers using full isolation by porous oxide silicon [FIPOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP58203474A 1983-10-28 1983-10-28 半導体装置の製法 Granted JPS6094737A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58203474A JPS6094737A (ja) 1983-10-28 1983-10-28 半導体装置の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58203474A JPS6094737A (ja) 1983-10-28 1983-10-28 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS6094737A true JPS6094737A (ja) 1985-05-27
JPH0348658B2 JPH0348658B2 (2) 1991-07-25

Family

ID=16474736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203474A Granted JPS6094737A (ja) 1983-10-28 1983-10-28 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPS6094737A (2)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258240B1 (en) 1997-12-26 2001-07-10 Canon Kabushiki Kaisha Anodizing apparatus and method
US6410436B2 (en) 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US6547938B1 (en) 1999-03-25 2003-04-15 Canon Kabushiki Kaisha Anodizing apparatus, utilizing a perforated negative electrode
US6627830B2 (en) 2000-07-31 2003-09-30 Idec Izumi Corporation Push button and teaching pendant with the push button
WO2015198955A1 (ja) * 2014-06-27 2015-12-30 株式会社村田製作所 めっき装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258240B1 (en) 1997-12-26 2001-07-10 Canon Kabushiki Kaisha Anodizing apparatus and method
US6547938B1 (en) 1999-03-25 2003-04-15 Canon Kabushiki Kaisha Anodizing apparatus, utilizing a perforated negative electrode
US7014748B2 (en) 1999-03-25 2006-03-21 Canon Kabushiki Kaisha Anodizing method, substrate processing method, and substrate manufacturing method
US6410436B2 (en) 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US6627830B2 (en) 2000-07-31 2003-09-30 Idec Izumi Corporation Push button and teaching pendant with the push button
WO2015198955A1 (ja) * 2014-06-27 2015-12-30 株式会社村田製作所 めっき装置
JPWO2015198955A1 (ja) * 2014-06-27 2017-04-27 株式会社村田製作所 めっき装置

Also Published As

Publication number Publication date
JPH0348658B2 (2) 1991-07-25

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