JPS62209829A - メサ型半導体装置の製造方法 - Google Patents

メサ型半導体装置の製造方法

Info

Publication number: JPS62209829A
Authority: JP; Japan
Prior art keywords: mesa; semiconductor substrate; resist film; groove; mask
Prior art date: 1986-03-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP5187786A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0575167B2 (fr

Inventor

Takashi Jinbo

神保　隆

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Components Co Ltd

Original Assignee

Toshiba Components Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-03-10

Filing date

1986-03-10

Publication date

1987-09-16

1986-03-10 Application filed by Toshiba Components Co Ltd filed Critical Toshiba Components Co Ltd

1986-03-10 Priority to JP5187786A priority Critical patent/JPS62209829A/ja

1987-09-16 Publication of JPS62209829A publication Critical patent/JPS62209829A/ja

1993-10-20 Publication of JPH0575167B2 publication Critical patent/JPH0575167B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 47
238000004519 manufacturing process Methods 0.000 title claims description 9
239000000758 substrate Substances 0.000 claims abstract description 29
239000012535 impurity Substances 0.000 claims abstract description 13
238000005530 etching Methods 0.000 claims abstract description 9
238000000034 method Methods 0.000 claims abstract description 9
238000000151 deposition Methods 0.000 claims 1
239000011521 glass Substances 0.000 abstract description 7
QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
230000015556 catabolic process Effects 0.000 description 3
238000010586 diagram Methods 0.000 description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
230000007547 defect Effects 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
238000002161 passivation Methods 0.000 description 1
230000000149 penetrating effect Effects 0.000 description 1

Landscapes

Weting (AREA)

JP5187786A 1986-03-10 1986-03-10 メサ型半導体装置の製造方法 Granted JPS62209829A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP5187786A JPS62209829A (ja)	1986-03-10	1986-03-10	メサ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP5187786A JPS62209829A (ja)	1986-03-10	1986-03-10	メサ型半導体装置の製造方法

Publications (2)

Publication Number	Publication Date
JPS62209829A true JPS62209829A (ja)	1987-09-16
JPH0575167B2 JPH0575167B2 (fr)	1993-10-20

Family

ID=12899108

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP5187786A Granted JPS62209829A (ja)	1986-03-10	1986-03-10	メサ型半導体装置の製造方法

Country Status (1)

Country	Link
JP (1)	JPS62209829A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5861660A (en) *	1995-08-21	1999-01-19	Stmicroelectronics, Inc.	Integrated-circuit die suitable for wafer-level testing and method for forming the same

1986
- 1986-03-10 JP JP5187786A patent/JPS62209829A/ja active Granted

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5861660A (en) *	1995-08-21	1999-01-19	Stmicroelectronics, Inc.	Integrated-circuit die suitable for wafer-level testing and method for forming the same

Also Published As

Publication number	Publication date
JPH0575167B2 (fr)	1993-10-20

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Legal Events

Date	Code	Title	Description
2004-10-19	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2005-09-27	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2006-03-10	EXPY	Cancellation because of completion of term